Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer

Abstract

The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leakage caused by the built-in polarization at the heterointerface within the device. In this paper, in order to improve the output power, a new structure of p-type composition-graded AlxGa1−xN electron blocking layer (EBL) is proposed in the VCSEL, by replacing the last quantum barrier (LQB) and EBL in the conventional structure. The simulation results show that the proposed EBL in the VCSEL suppresses the leaking electrons remarkably and contributes to a 70.6% increase of the output power, compared with the conventional GaN-based VCSEL.

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications

“…Nine of the papers, [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 ], explore various designs of wide bandgap high power devices. The remaining papers cover various applications based on wide bandgaps, such as ZnO Nanorods for High Photon Extraction Efficiency of GaN-Based Photonic Emitter [ 13 ], InGaZnO Thin-Film Transistors [ 14 ], Wide Band Gap WO 3 Thin Film [ 15 ], Silver Nanorings [ 16 , 17 ] and InGaN Laser Diode [ 18 , 19 , 20 ].…”

“…Deng et al [ 19 ] describes an optimization of InGaN/GaN distributed feedback laser diodes to enhance the efficiency. Finally, Luo et al [ 20 ] propose a design based on a p-type composition-graded Al x Ga 1−x N electron blocking layer to improve the output power of GaN-based VCSEL.…”