Electrically Driven Single-Photon Source

Zhong, Yuan; Kardynał, Beata; Stevenson, R. M.; Shields, A. J.; Lobo, Charlene; Cooper, Ken B.; Beattie, Neil; Ritchie, David A.; Pepper, M.

doi:10.1126/science.1066790

Cited by 1,117 publications

(795 citation statements)

References 18 publications

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“…Similarly, scattering losses at interfaces and signal attenuation in optical fibers decrease with wavelength as well. Furthermore, V Si -related defects in SiC can be integrated with existing optoelectronic devices 21 and, in contrast to GaAs-based quantum dots 22 , operate even at room temperature.…”

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confidence: 99%

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

et al. 2015

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Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption crosssection, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

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confidence: 99%

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

et al. 2015

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“…Semiconductor quantum dots, in particular from III/V materials, prove to be especially fascinating tools for electrically driven single-photon generation 14 . However, a major drawback for these structures so far is the necessity of cryogenic temperatures because of low exciton binding energies 15 .…”

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confidence: 99%

Electrically driven photon antibunching from a single molecule at room temperature

et al. 2012

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single-photon emitters have been considered for applications in quantum information processing, quantum cryptography and metrology. For the sake of integration and to provide an electron photon interface, it is of great interest to stimulate single-photon emission by electrical excitation as demonstrated for quantum dots. Because of low exciton binding energies, it has so far not been possible to detect sub-Poissonian photon statistics of electrically driven quantum dots at room temperature. However, organic molecules possess exciton binding energies on the order of 1 eV, thereby facilitating the development of an electrically driven single-photon source at room temperature in a solid-state matrix. Here we demonstrate electroluminescence of single, electrically driven molecules at room temperature. By careful choice of the molecular emitter, as well as fabrication of a specially designed organic lightemitting diode structure, we were able to achieve stable single-molecule emission and detect sub-Poissonian photon statistics.

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“…Similarly, in linear optics quantum computing, the successful operation of a quantum logic gate is often heralded by the detection of a photon number state 6 . Low-noise photon number detection would also be useful for characterizing non-classical light sources 7,8 and security analysis in quantum cryptography 9 . In combination with parametric down-conversion sources, photon number detection can also be used for the generation and conditioning of photonic Fock states 10 , as well as more complex quantum light states 11 .…”

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Practical photon number detection with electric field-modulated silicon avalanche photodiodes

2012

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Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. more generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

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Electrically Driven Single-Photon Source

Cited by 1,117 publications

References 18 publications

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Electrically driven photon antibunching from a single molecule at room temperature

Practical photon number detection with electric field-modulated silicon avalanche photodiodes

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