Electrically driven photon antibunching from a single molecule at room temperature

Abstract

single-photon emitters have been considered for applications in quantum information processing, quantum cryptography and metrology. For the sake of integration and to provide an electron photon interface, it is of great interest to stimulate single-photon emission by electrical excitation as demonstrated for quantum dots. Because of low exciton binding energies, it has so far not been possible to detect sub-Poissonian photon statistics of electrically driven quantum dots at room temperature. However, organic molecules possess exciton binding energies on the order of 1 eV, thereby facilitating the development of an electrically driven single-photon source at room temperature in a solid-state matrix. Here we demonstrate electroluminescence of single, electrically driven molecules at room temperature. By careful choice of the molecular emitter, as well as fabrication of a specially designed organic lightemitting diode structure, we were able to achieve stable single-molecule emission and detect sub-Poissonian photon statistics.

Anomalous dip observed in intensity autocorrelation function as an inherent nature of single-photon emitters

“…In comparison to Eq. (1), the anomalous dip observed at τ ∼ 0 is satisfactorily reproduced with theg (2) (τ) as indicated by the red line in Fig. 1 (b).…”

“…1 (b). Therefore, it is essential to employ theg (2) Generalized intensity autocorrelation function presented in this work is applicable to the whole T rep /τ e range, which is essential to precisely evaluate the α 0 under arbitrary operating conditions. Note that the fine fitting for the height of each correlation peak at τ = n·T rep (|n| ≥ 1) shown in Fig.…”

“…Thus, for evaluating the α 0 , it is beneficial to describe the dip depth as a function of T rep /τ e which is specified by selecting the emitter and the repetition period of the excitation. Here, we introduce the dip depth defined by ∆ −g (2) (0) = ∆ − α 0 , where ∆ is the lower limit of the coincidence counts at τ = 0 without considering the inherent nature of quantum emitter 34 , and we set B = 0. Figure 3 presents the calculated dip depth as a function of T rep /τ e for some α 0 values.…”

“…a) Electronic mail: nakajima@es.hokudai.ac.jp 1 A variety of single-photon emitters (SPEs) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] have been widely investigated for applications in quantum key distribution (QKD) 21 , quantum information processing 22 , and quantum metrology 23 .…”

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

“…For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots 6 , colour centres in diamond 7 , dopants in nanostructures 8 and molecules 9 . More recently, ensemble emitters with spin dephasing times in the order of microseconds and room-temperature optically detectable magnetic resonance (ODMR) have been identified in silicon carbide (SiC) [10][11][12] , a compound being highly compatible to up-to-date semiconductor device technology.…”