Electrical transport properties of Si-doped hexagonal boron nitride epilayers

Majety, S.; Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4860949

Cited by 46 publications

(56 citation statements)

References 21 publications

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“…This was achieved via the use of square shaped sample geometry with triangular ohmic contacts fabricated on the four corners of the sample. [18][19][20] The microscope image of a fabricated h-(BN) 1-x (C 2 ) x alloy (x = 0.032) sample with ohmic contact (Ni/Au bilayers) geometry employed is shown in Fig. 4(a).…”

Section: Resultsmentioning

confidence: 99%

“…The ratio of the contact size (c) to the sample length scale (L) is about 1/7.5, a configuration which is expected to provide a high confidence in the measured carrier type. 18 Ohmic contact processing procedures were adopted from those developed from pure h-BN epilayers 20 and the ohmic behavior is evident based on the linear I-V characteristic shown in Fig. 4(b).…”

Section: Resultsmentioning

confidence: 99%

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Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Uddin

Doan

et al. 2014

AIP Advances

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The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN)1-x(C2)x alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN)1-x(C2)x alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm2/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C3H8)) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN)1-x(C2)x alloys n-type and corroborates the Hall-effect measurement results.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Uddin

Doan

et al. 2014

AIP Advances

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“…He et al [43] showed, via Hall effect and temperature-dependent resistivity measurements, n-type conduction with a low resistivity at room temperature and two shallow donor levels at high temperature of about 800 K when the Si occupies the B site. On the other hand, Majety et al [45] reported a deep donor level of about 1.20 eV using the same technique and concluded that Si-doped h-BN is not suitable for room temperature device applications. Inspired by the experimental realization of Si-doped h-BN monolayers, [44,45] a systematic study of the physical properties of various possible Si atomic configurations will be interesting.…”

Section: Introductionmentioning

confidence: 99%

“…[15,[42][43][44][45][46][47] Using DFT methods, Liu et al [47] revealed that the Si impurity prefers the B site, but as opposed to C, it severely deforms the h-BN structure preserving the sp 3 -like bonding.…”

Section: Introductionmentioning

confidence: 99%

Defect charge states in Si doped hexagonal boron-nitride monolayer

Mapasha

Molepo

Andrew

et al. 2016

J. Phys.: Condens. Matter

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We perform ab-initio density functional theory calculations to investigate the energetics, electronic and magnetic properties of isolated stoichiometric and non-stoichiometric substitutional Si complexes in a hexagonal boron-nitride monolayer. The Si impurity atoms substituting the boron atom sites Si B giving non-stoichiometric complexes are found to be the most energetically favourable, and are half-metallic and order ferromagnetically in the neutral charge state. We find that the magnetic moments and magnetization energies increase monotonically when Si defects form a cluster. Partial density of states and standard Mulliken population analysis indicate that the half-metallic character and magnetic moments mainly arise from the Si 3p impurity states. The stoichiometric Si complexes are energetically unfavorable and non-magnetic.When charging the energetically favourable non-stoichiometric Si complexes, we find that the formation energies strongly depend on the impurity charge states and Fermi level position. We also find that the magnetic moments and orderings are tunable by charge state modulation q = -2, -1, 0, +1, +2. The induced half-metallic character is lost (retained) when charging isolated (clustered) Si defect(s). This underlines the potential of a Si doped hexagonal boron-nitride monolayer for novel spin-based applications.

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“…As a n-type dopant for sp 2 -BN sulphur (S) found to be suitable [24]. However, common group 13-N n-type dopant silicon (Si), is found to be a deep donor that needs temperature of 800 °C to be activated and thus is not suitable for room temperature applications [26]. Similarly as for 13-nitrides, Mg has been successfully employed as a p-type dopant for BN [27].…”

Section: Properties and Applications Of Sp 2 -Bnmentioning

confidence: 99%

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Chubarov¹

2014

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The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp 2 hybridised Boron Nitride (sp 2 -BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp 2 -BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures.For the growth of sp 2 -BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H 2 as carrier gas is found to be necessary for the growth of crystalline sp 2 -BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp 2 -BN film.It was observed that for the growth of crystalline sp 2 -BN on c-axis oriented -Al 2 O 3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp 2 -BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp 2 -BN is 1500 °C. Nevertheless, the growth of crystalline sp 2 -BN was also observed on -Al 2 O 3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp 2 -BN was formed, according to X-ray diffraction.Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on Om man skulle kunna göra ljusdioder av BN skulle dessa sända ut ljus med en våglängd på cirka 220 nm alltså den typen av ultraviolettljus (UV) som ozonlagret filtrerar bort från solen. Av sådana ljusdioder skulle man sedan kunna göra vita ljusdioder genom att använda en luminofor, vilket är ett material som absorberar UV-ljus och sedan sänder ut vitt ljus, men ännu mera spännande skulle det vara att använda ljusdioderna för vattenrening då denna typ av UV-ljus dödar bakterier.Eftersom BN bildar samma kristallstrukturer som kol, så är den grafitlika, sp 2 -hybridiserade formen av BN mycket intressant att använda tillsammans med grafen.Beräkningar har visat att om man använder sp 2 -BN som substrat till grafen så kommer man åt större del av de förutspådda materialegenskaperna för grafen än om man använder andra substrat.Syftet med detta arbete har varit att utveckla en syntesprocess för tunna filmer av sp 2 -BN med tillräckligt hög kvalité för att kunna börja utforska alla möjligheter med BN, för detta har en teknik som kal...

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Electrical transport properties of Si-doped hexagonal boron nitride epilayers

Cited by 46 publications

References 21 publications

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Defect charge states in Si doped hexagonal boron-nitride monolayer

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

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