Electrical transport properties and morphology of topological insulator Bi2Se3 thin films with different thickness prepared by magnetron sputtering

Zhang, Min; Zhao, Wei; Jin, Rong; Ji, Yaxin; Yan, Yong; Pu, X.Y.; Yang, Xinsheng; Zhao, Yong

doi:10.1016/j.tsf.2016.02.043

Cited by 33 publications

(15 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 2016, Zhang et al deposited Bi

thin films with good crystalline quality on Si within 10 min by using Bi

alloy with purity of 99.999% as target in MSD and discussed the resistivity characteristics of the films [ 153 ]. MSD has the advantages of simple and easy control, as well as low cost and high speed; however, it also has the problems of high energy consumption and poor material quality [ 28 , 152 ].…”

Section: Synthesismentioning

confidence: 99%

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

et al. 2021

View full text Add to dashboard Cite

Owing to their extraordinary physical and chemical properties, two-dimensional (2D) materials have aroused extensive attention and have been widely used in photonic and optoelectronic devices, catalytic reactions, and biomedicine. In particular, 2D materials possess a unique bandgap structure and nonlinear optical properties, which can be used as saturable absorbers in ultrafast lasers. Here, we mainly review the top-down and bottom-up methods for preparing 2D materials, such as graphene, topological insulators, transition metal dichalcogenides, black phosphorus, and MXenes. Then, we focus on the ultrafast applications of 2D materials at the typical operating wavelengths of 1, 1.5, 2, and 3 μm. The key parameters and output performance of ultrafast pulsed lasers based on 2D materials are discussed. Furthermore, an outlook regarding the fabrication methods and the development of 2D materials in ultrafast photonics is also presented.

show abstract

“…In 2016, Zhang et al deposited Bi

thin films with good crystalline quality on Si within 10 min by using Bi

Section: Synthesismentioning

confidence: 99%

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

et al. 2021

View full text Add to dashboard Cite

show abstract

“…On the other hand, magnetron sputtering affords precise thickness control with uniform and high deposition rate for the preparation of large area thin films. As per existing literature, limited reports are available on Bi 2 Se 3 thin films grown by magnetron sputtering for study of WAL behavior in sputtered film 14 , 22 , 23 . The contributions of surface states and bulk carriers to total transport are highly dependent on the thickness of the film 16 .…”

Section: Introductionmentioning

confidence: 99%

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Gautam

Aggarwal

Singh

et al. 2022

Sci Rep

View full text Add to dashboard Cite

We report a low-temperature magneto transport study of Bi2Se3 thin films of different thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio frequency magnetron sputtering technique. The high-resolution x-ray diffraction measurements revealed the growth of rhombohedral c-axis {0003n} oriented Bi2Se3 films on sapphire (0001). Vibrational modes of Bi2Se3 thin films were obtained in the low wavenumber region using Raman spectroscopy. The surface roughness of sputtered Bi2Se3 thin films on sapphire (0001) substrates were obtained to be ~ 2.26–6.45 nm. The chemical and electronic state of the deposited Bi2Se3 was confirmed by X-ray photoelectron spectroscopy and it showed the formation of Bi2Se3 compound. Resistivity versus temperature measurements show the metallic nature of Bi2Se3 films and a slight up-turn transition in resistivity at lower temperatures < 25 K. The positive magneto-resistance value of Bi2Se3 films measured at low temperatures (2–100 K) confirmed the gapless topological surface states in Bi2Se3 thin films. The quantum correction to the magnetoconductivity of thin films in low magnetic field is done by employing Hikami–Larkin–Nagaoka theory and the calculated value of coefficient ‘α’ (defining number of conduction channels) was found to be 0.65, 0.83 and 1.56 for film thickness of 40, 80 and 160 nm, respectively. These observations indicate that the top and bottom surface states are coupled with the bulk states and the conduction mechanism in Bi2Se3 thin films varied with the film thicknesses.

show abstract

“…However, there are only a limited number of studies where these models have been considered for interpreting quantitatively the WAL effect in granular systems . Evidence and description of TI properties in such polycrystalline and granular systems is of dramatic importance, since it opens the way to the use of technologically‐appealing techniques for their fabrication . Among them, Metal Organic Chemical Vapor Deposition (MOCVD) can be efficiently exploited for the growth of chalcogenide conformal thin films and nanostructures on large areas .…”

Section: Summary Of the Published α And Lϕ Values For Samples Of The mentioning

confidence: 99%

Weak Antilocalization in Granular Sb₂Te₃ Thin Films Deposited by MOCVD

Cecchini

Mantovan

Wiemer

et al. 2018

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Topological insulator (TI) properties of granular Sb 2 Te 3 thin films, grown by MOCVD at room temperature on 4 00 SiO 2 /Si substrates, are investigated. The negative magneto-conductance (MC), analyzed in terms of the Hikami-Larkin-Nagaoka theory, reveals the presence of a clear weak antilocalization (WAL) effect, thus demonstrating the TI character of our system. The extracted WAL prefactor (α) values are explained in terms of the film conductance, in agreement with the existing models for WAL in transport disordered systems. The dephasing length (l ϕ ) dependence on temperature is affected by the grain size of the film and might in turn explain the observed temperature dependence of α and of the conductance. These results demonstrate the feasibility of technologically-relevant processes to synthesize TIs films, at the same time providing a tool to investigate the effects of the film microstructure on the topological character of their transport properties.

show abstract

Electrical transport properties and morphology of topological insulator Bi2Se3 thin films with different thickness prepared by magnetron sputtering

Cited by 33 publications

References 29 publications

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Weak Antilocalization in Granular Sb₂Te₃ Thin Films Deposited by MOCVD

Contact Info

Product

Resources

About

Electrical transport properties and morphology of topological insulator Bi2Se3 thin films with different thickness prepared by magnetron sputtering

Cited by 33 publications

References 29 publications

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD

Contact Info

Product

Resources

About

Weak Antilocalization in Granular Sb₂Te₃ Thin Films Deposited by MOCVD