Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils

Highly bendable characteristics of amorphous indium–gallium–zinc-oxide transistors embedded in a neutral plane

“…1. A similar reversible behavior between the increase of the external strain and the degradation of the electrical performance was also obtained for a-Si:H devices, 17,18) although the magnitude of the strain-induced change was smaller than that of the present a-IGZO TFTs.…”

“…7,9,19) Namely, the definitive opening of cracks in the TFT layers mainly causes permanent electrical failure, called fracture mechanics in the regime of "definitive mechanical failure" under high-strain conditions. 17) Figure 3 illustrates the accumulated stress effect on a device characterized by a different geometry in the integrated bending system. For the consecutive outward bending of the a-IGZO TFTs, two backplane conditions were prepared using substrates on PI and on PI with a plastic back-film; the total substrate thicknesses was 17 and 125 µm, respectively (insert of Fig.…”

Origins of Structural Hole Traps in Hydrogenated Amorphous Silicon

“…For example, recent advances in the understanding of stress [42][43][44] could be used in leveraging strain in samples to prevent atomic displacements, as could attempts at targeted annealing to crystallize or reamorphize regions under which metastable displacement defects are present. While these correlations advance the understanding of the nature of structural hole-trapping defects in hydrogenated amorphous silicon, we hope that more knowledge can be gleaned from the created ensemble of geometries.…”

Electromechanical properties of amorphous indium–gallium–zinc-oxide transistors structured with an island configuration on plastic

“…The strong correlation between the onset of cracks and the electrical failure of the devices under tensile stress indicates that the failure mechanism of the devices is caused by the unrecoverable deformation of the stacked inorganic layers in the regime of definitive mechanical failure. 19) In this regime, a favorable design for the stress relaxation of the backplane should increase the OCS, as shown in Fig. 5.…”

“…The correlation of the electrical failure and fracture mechanics in the films indicates that the electrical integrity of the bent devices will be strongly influenced by the elastic property of the stacked multilayers and their structure integrated in the backplane because differences in the onset of crack strain (OCS) can be expected to depend on the materials under this high-strain condition. [18][19][20] Three kinds of device structures were proposed to reduce the deformation of the brittle inorganic materials stacked as the multilayer configuration of the backplane. Figure 3(a) shows the transfer characteristic for a device adopting an organic ILD and organic PAS.…”