Electrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess

Abstract

We investigated the influence of the surface microstructure and chemistry of sol-gel grown PbZr 0.52 Ti 0.48 O 3 (PZT) on the electrical performance of PZT-based metal-insulator-metal (MIM) capacitors as a function of Pb precursor excess. Using surface-sensitive, quantitative X-ray photoelectron spectroscopy and scanning electron microscopy, we confirm the presence of ZrO x surface phase. Low Pb excess gives rise to a discontinuous layer of ZrO x on a (100) textured PZT film with a wide band gap reducing the capacitance of PZT-based MIMs whereas the breakdown field is enhanced. At high Pb excess, the nanostructures disappear while the PZT grain size increases and the film texture becomes (111). Concomitantly, the capacitance density is enhanced by 8.7%, and both the loss tangent and breakdown field are reduced by 20 and 25%, respectively. The role of the low permittivity, dielectric interface layer on capacitance and breakdown is discussed.

Direct processing of PbZr0.53Ti0.47O3 films on glass and polymeric substrates

“…Composition uniformity across the thickness would provide a substantial advantage for PTP over traditional crystallization methods (e.g., furnace or rapid thermal annealing), which can result in chemical fluctuations across the thickness [28,29] or surface Pb deficiency. [30] Lattice parameters (Table 1) of 0.292 nm and 0.268 nm are extracted from the inset fast Fourier transform (FFT) image (Figure 4a)…”