Effects of Nb and Mg doping on the dielectric and electromechanical properties of PbZrO3 thin films

PbZrO3‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review

“…PZ, (Pb,La)(Zr,Ti)O 3 (PLZT), (Pb,Nb)(Zr,Sn,Ti)O 3 (PNZST), and (Pb,La)(Zr,Sn,Ti)O 3 (PLZST) are typical PZ-based anti-ferroelectric films, and they have been extensively researched. [50][51][52] We compared the proportion of the documents number issued in the past 5 years (Figure 4b). Figure 4c shows that some important researches issued on PZ-based anti-ferroelectric films that are closed with energy storage for the past 28 years.…”

Constructing ferroelectric–antiferroelectric phase boundary in PbZrO3-based ceramics for enhancing hydrostatic-pressure-induced depolarization performances significantly

“…For example, La 3+ , Ba 2+ , Sr 2+ , Ti 4+ , Sn 4+ , Nb 5+ , W 5+ , (Mg 1/3 Nb 2/3 ) 4+ , (Mn 1/2 W 1/2 ) 4+ , (Mg 1/2 Mo 1/2 ) 4+ , (Al 1/2 Nb 1/2 ) 4+ have been introduced into PbZrO 3 , so the AFE ordering is destabilized, and hence the phase transition electric field and phase transition temperature are reduced and the temperature range for the intermediate FE phase is widened. 29–40 Therefore, double hysteresis loops are obtained in modified PbZrO 3 bulk materials as well as an enhanced pyroelectric effect and excellent depolarization properties being achieved in compositions around the EF–AFE phase boundary. The optimization of these electrical performances derives from structural distortions that are associated with diverse vibrational modes, when the various substitutions occur in the ABO 3 perovskite structure.…”