Electrical resistance drift of molybdenum silicide thin film temperature sensors

Ho, CM; Cha, Yu-Joung; Prakash, S.; Potwin, G.; Doerr, H.J.; Deshpandey, C.V.; Bunshah, R.F.; Zeller, M. V.

doi:10.1016/0040-6090(94)06453-9

Cited by 9 publications

(4 citation statements)

References 5 publications

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“…From the candidates for hightemperature sensing, we selected TiSi 2 on heavily boron (B + )doped poly-Si. To the best of our knowledge, this is the first time that the combination of these two materials has been employed for resistive temperature sensing up to 800 • C. Other types of silicides for heating and temperature-sensing purposes are tantalum silicide (TaSi 2 ), cobalt silicide (CoSi 2 ) [10], molybdenum silicide (MoSi 2 ) [11], nickel silicide (NiSi) [12] and platinum silicide (PtSi) [13].…”

Section: Introductionmentioning

confidence: 99%

The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

Vereshchagina¹,

Wolters²,

Gardeniers³

2011

J. Micromech. Microeng.

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Thin films of titanium silicide (TiSi 2 ) formed on heavily boron-doped polycrystalline silicon (poly-Si/B + ) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10 −3 • C −1 , a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 • C. This work discusses the fabrication method and the morphological and electrical characterization of the TiSi 2 /poly-Si thin film resistors throughout the stages of its formation.

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Section: Introductionmentioning

confidence: 99%

The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

Vereshchagina¹,

Wolters²,

Gardeniers³

2011

J. Micromech. Microeng.

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“…To evaluate engine performance and monitor emissions, it is necessary to measure the surface temperature of components in the hot section of turbine engines. Several techniques have been used to monitor the surface temperature of blades and vanes, including embedded wire thermocouples, infrared photography, pyrometry, and thermal paints [1]- [6]. One of the most common techniques to measure temperature employs wire thermocouples imbedded in ceramic coatings on blades but these coatings can cause serious structural problems and aerodynamic instability in thinner blades by disturbing the flow of cooling air [2].…”

Section: Introductionmentioning

confidence: 99%

Ceramic temperature sensors for harsh environments

Gregory

You

2005

IEEE Sensors J.

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A ceramic thermocouple based on indium-tin-oxide (ITO) thin films is being developed to measure the surface temperature of gas turbine engine components employed in power and propulsion systems that operate at temperatures in excess of 1500 C. By fabricating ITO elements with substantially different charge carrier concentrations, it was possible to construct a robust ceramic thermocouple. A thermoelectric power of 6.0 V C, over the temperature range 25-1250 C, was realized for an unoptimized ITO ceramic thermocouple. The charge carrier concentration difference in the legs of the ITO thermocouple was established by r.f. sputtering in oxygen-rich and nitrogen-rich plasmas. SEM micrographs revealed that after high-temperature exposure, the surfaces of the nitrogen prepared ITO films exhibited a partially sintered microstructure with a contiguous network of ITO nanoparticles. Thermal cycling of ITO films in various oxygen partial pressures showed that the temperature coefficient of resistance was nearly independent of oxygen partial pressure at temperatures above 800 C and eventually became independent of oxygen partial pressure after repeated thermal cycling below 800 C. Based on these results, a versatile ceramic sensor system has been envisioned where a ceramic thermocouple and strain sensor can be combined to yield a multifunctional ceramic sensor array.Index Terms-Ceramic thermocouple, indium-tin-oxide (ITO).

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“…• Potential applicability in MEMS/NEMS; [127], b [123], c [28], d [119], e [120], f [124] Platinum (Pt, TCR = 3.9 × 10 −3 / • C) might be a preferred material for temperature sensing [100], [101]. However, thermistors based on Pt often require non-standard, low-temperature processing which is not compatible with processing on poly-Si.…”

Section: Choice Of a Materials For Temperature Sensing 421 Requiremementioning

confidence: 99%

“…From the candidates for high temperature sensing we selected TiSi 2 on heavily boron (B + ) doped poly-Si. To the best of our knowledge, this is the first time that the combination of these two materials was employed for resistive temperature sensing up to 800 • C. Other types of silicides for heating and temperature sensing purposes are tantalum silicide (TaSi 2 ), cobalt silicide (CoSi 2 ) [28], molybdenum silicide (MoSi 2 ) [119], nickel silicide (NiSi) [120] and platinum silicide (PtSi) [121]. TiSi 2 is commonly used in the semiconductor industry to reduce parasitic series resistance and contact resistance between metallization and device [122], [123], [124], [125].…”

Section: Introductionmentioning

confidence: 99%

Low-power silicon-based thermal sensors and actuators for chemical applications

Vereshchagina¹

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Electrical resistance drift of molybdenum silicide thin film temperature sensors

Cited by 9 publications

References 5 publications

The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

Ceramic temperature sensors for harsh environments

Low-power silicon-based thermal sensors and actuators for chemical applications

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