Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes

Hackam, R.; Harrop, Peter

doi:10.1109/t-ed.1972.17586

Cited by 145 publications

(67 citation statements)

References 25 publications

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“…For this concentration, the barrier height first increases with decreasing temperature up to 160 K and then decreases. This apparent decrease in the zero-bias barrier height below 160 K is similar to the observations made by others on different types of Schottky diodes [9,11,14,18,26,32]. The experimental barrier heights and ideality factors, as well as those simulated using two different models, are shown in Table 1.…”

Section: Resultssupporting

confidence: 87%

“…Thermionic emission (TE) theory is normally used to extract the SBD parameters [1][2][3][4][5][6][7], however, there have been several reports of certain anomalies [4,[7][8][9] at low temperatures. The ideality factor and barrier height determined from the forward bias current-voltage ðI2VÞ characteristics on the basis of the TE mechanism were found to be a strong function of temperature and doping concentration [5,[9][10][11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Hudait

Krupanidhi

2001

Physica B: Condensed Matter

122

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The barrier height and ideality factor of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy (MOVPE) on undoped and Si-doped n-GaAs substrates were determined in the doping range of 2.5 Â 10 15 -1 Â 10 18 cm À3 at low temperatures. The thermionic-emission zero-bias barrier height for current transport decreases rapidly at concentrations greater than 1 Â 10 18 cm À3. The ideality factor also increases very rapidly at higher concentration and at lower temperature. The results agree quite well with thermionic field emission (TFE) theory. The doping dependence of the barrier height and the ideality factor were obtained in the concentration range of 2.5 Â 10 15 -1.0 Â 10 18 cm À3 and the results are well described using TFE theory. An excellent match between the homogeneous barrier height and the effective barrier height was observed which supports the good quality of the GaAs film. The observed variation in the zero-bias barrier height and the ideality factor can also be explained in terms of barrier height inhomogeneities in the Schottky diode. r

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Section: Resultssupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Hudait

Krupanidhi

2001

Physica B: Condensed Matter

122

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“…2, it is observed that the ideality factor increases with a decrease of temperature. This increase is very slow from 300 K down to 120 K and then increases steeply down to 80 K. The zero-bias barrier height decreases slowly with temperature down to 120 K and the further decrease is very steep down to 80 K. For an ideal Schottky diode, the zero-bias barrier height should increase as temperature is decreased, in accordance with the band gap variation with temperature [10,12,13]. Here, the zero-bias barrier height is showing an inverse behavior to the ideality factor variation.…”

Section: I±v Characteristicsmentioning

confidence: 79%

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

Hudait

Venkateswarlu

Krupanidhi

2001

Solid-State Electronics

167

100

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The current±voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80±300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T 0 eect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the eective barrier height was observed and infer good quality of the GaAs ®lm. No generation±recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K À2 cm À2 , which is close to the value used for the determination of the zero-bias barrier height. Ó

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“…The expression for interface state density (N SS ) as determined by Card and Schroder [21,22] is reduced to…”

Section: Results and Dicussionmentioning

confidence: 99%

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Padma

Reddy

2017

Физика И Техника Полупроводников

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Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes

Cited by 145 publications

References 25 publications

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

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