Electrical properties of epitaxial Lu- or Y-doped La 2 O 3 /La 2 O 3 /Ge high- k gate-stacks

Kanashima, Takeshi; Yamashiro, Ryoji; Zenitaka, Masato; Yamamoto, Keisuke; Wang, Dong; Tadano, J.; Yamada, Shinya; Nohira, Hiroshi; Nakashima, Hiroshi; Hamaya, Kohei

doi:10.1016/j.mssp.2016.11.016

Cited by 9 publications

(3 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the MIS after the PMA, the current density is ~10 -6 A/cm 2 when an applied voltage is -1 V. That means a small leakage current even for the direct contact of a high-k-gate-insulator on Ge. Recent our work clearly revealed that the above electrical properties are further improved 46) . The excellent electrical properties will open a way for all epitaxial high-k gate-stacks in next-generation Ge transistors.…”

Section: An Epitaxial Gate-stack Structure For Gementioning

confidence: 56%

(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices

Hamaya¹,

Yamada²,

Kasahara³

et al. 2016

ECS Trans.

View full text Add to dashboard Cite

Heteroepitaxial growth of bcc metallic alloys or a high-k insulator on Ge(111) has been explored for next generation Ge-based devices. First, we introduce a finely controlled crystal growth technique of bcc-type ferromagnetic alloys on Ge(111). Next, we show that the Fermi level pinning is significantly suppressed at the high-quality bcc-alloys/Ge heterointerfaces. Using these kinds of structures, we can achieve spin injection and detection in n-Ge. Finally, we present a new approach to gate-stack structures for Ge-MOSFET. Even a crystalline high-k insulator can be grown epitaxially on Ge(111) and a high-quality heterointerface can be achieved. Also, reasonable electrical characteristics are obtained. These finely controlled heterointerfaces will open a way for developing new technologies in next generation Ge-based devices with low power consumption.

show abstract

Section: An Epitaxial Gate-stack Structure For Gementioning

confidence: 56%

(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices

Hamaya¹,

Yamada²,

Kasahara³

et al. 2016

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…Therefore, the La 2 O 3 (0 0 1) deposited on a Ge(1 1 1) substrate is suggested to be a feasible gate oxide without forming GeO x suboxide. In fact, a recent study reported that a Lu-doped La 2 O 3 /La 2 O 3 (0 0 1)/Ge(1 1 1) device without any extra passivation layer showed capacitancevoltage (C-V) characteristics with negligibly small hysteresis, and a low interface trap density (D it ) (less than 10 12 cm −2 eV −1 ) [22]. These findings imply the importance of controlling the orientation of both the high-κ and semiconductor materials as well as the interface atomic bonds to improve the interface properties.…”

Section: Resultsmentioning

confidence: 99%

A first-principles study of the structural and electronic properties of the epitaxial Ge(1 1 1)/La₂O₃(0 0 1) heterostructure

Liu¹,

Ko²,

Hwang³

et al. 2019

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The effects of the atomic configuration of the epitaxial Ge(1 1 1)/La2O3(0 0 1) interface on the electrical properties of the structure were studied using first-principles calculations. The interface stability of this heterostructure is susceptible to the atomic configuration of the interface. The Ge–O-bonded interface without interfacial gap states is generally more stable than the Ge–La-bonded interface, which involves interfacial gap states. The band alignment is affected by the charge transfer depending on the interface atomic configuration, and the band bending across the La2O3 region was observed due to the electronic dipole inside the La2O3.

show abstract

“…Recently, several works have found that the doping of Lu can substantially improve the optoelectronic properties of the material. − For example, Çolak and Karaköse prepared Lu-doped ZnO nanorods by hydrothermal and sol–gel spin-coating methods and found that while the electrical conductivity of ZnO increased, its transmissivity and photoluminescence also increased with the concentration of Lu. Therefore, Lu 3+ , which is also a 3+ cation, can be considered to replace Al 3+ as a doping element to enhance the photovoltaic properties of ZnO.…”

Section: Introductionmentioning

confidence: 99%

Lutetium-Doped ZnO to Improve Photovoltaic Performance: A First-Principles Study

Hua

Yang

2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

We investigated the effect of different impurity concentrations of lutetium (Lu)-doped ZnO on its optoelectronic properties utilizing the first principles based on density functional theory. The findings show that 1.85 at.% Lu-ZnO has the smallest lattice distortion and the impurity formation energy is less than zero, with the likelihood of chemical preparation. Analysis of electrical properties revealed that the conductivity of Lu-doped ZnO decreases with increasing impurity concentration and all show n-type semiconductors. Moreover, the spectral data suggested that the transmittivity increases with increasing doping concentration, and optical properties were extremely sensitive to the impurity concentration in the visible region. The current findings will greatly broaden the application of ZnO in photovoltaic devices.

show abstract

Electrical properties of epitaxial Lu- or Y-doped La 2 O 3 /La 2 O 3 /Ge high- k gate-stacks

Cited by 9 publications

References 34 publications

(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices

(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices

A first-principles study of the structural and electronic properties of the epitaxial Ge(1 1 1)/La₂O₃(0 0 1) heterostructure

Lutetium-Doped ZnO to Improve Photovoltaic Performance: A First-Principles Study

Contact Info

Product

Resources

About

Electrical properties of epitaxial Lu- or Y-doped La 2 O 3 /La 2 O 3 /Ge high- k gate-stacks

Cited by 9 publications

References 34 publications

(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices

(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices

A first-principles study of the structural and electronic properties of the epitaxial Ge(1 1 1)/La2O3(0 0 1) heterostructure

Lutetium-Doped ZnO to Improve Photovoltaic Performance: A First-Principles Study

Contact Info

Product

Resources

About

A first-principles study of the structural and electronic properties of the epitaxial Ge(1 1 1)/La₂O₃(0 0 1) heterostructure