Two-step reset behaviors in the resistance switching properties of the top Al/TiOx/bottom Cu structure were studied. During the electroforming and set steps, two types of conducting filaments composed of Cu and oxygen vacancies (Cu-CF and V(O)-CF) were simultaneously (or sequentially) formed when Al was negatively biased. In the subsequent reset step with the opposite bias polarity, the Cu-CFs ruptured first at ~0.5 V, and formed an intermediate state. The trap-filled V(O)-CFs were transformed into a trap-empty state, resulting in a high-resistance state at ~1 V. Matrix phase in the electrochemical metallization cell can play an active role in resistance switching.
The resistive switching (RS) of Au/BiFeO 3 /SrRuO 3 samples was shown to be controllable by using a thermal treatment and an electrical stressing method. Such a modulation of resistive switching effect can be associated to the oxygen vacancy movement and redistribution within the BiFeO 3 thin film and the trapping/detrapping of charge carriers at the interfaces. After the application of a negative voltage to the thin film for a stressing period, a resistive switching reversal effect occurred and the current retention ability in the low resistance state increased, indicating an increase in the trap density at the interface and an enhancement of the charge carrier trapping ability. The trap density, trap level, and Schottky barrier height all display corresponding trends in their values as a result of the modulation of RS effect. The results indicate that the greater the accumulation of oxygen vacancies at any the film/electrode interface, when a reverse bias is applied the higher the resistance ratio was under reverse bias. Its diffusion process was likely to be hindered and the trapped charge carriers could be retained after a long time of electrical stressing.
We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio-frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the growth pattern of the conducting filaments. Additionally, the related conducting mechanism is discussed in detail.
In this work, device cell with the Cu/VOx/Al structure was fabricated. The resistance switching performance was tested by Semiconductor Device Analyzer (Agilent B1500). This structure performs bipolar behavior. Controllable Set process and gradual Reset process, and various RLRS and RHRS could be obtained by controlling its current compliance (Icc) and reset stop voltage (Vstop), respectively. The Reset current could decrease to sub-10μA when Icc dropped to 40μA. The RHRS could be greater than 1E8 ohm with 1.5 V amplitude of applied reset voltage. This structure also has a good endurance (>1000 cycles) and reliable read disturbance times (>1000s) with 80oC ambient temperature. Local filament was observed in LRS by conducting atomic force microscope (CAFM), and Schottky barrier height modulation was obtained by I-V fitting in Reset process.
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