Electrical properties of amorphous Se70Ge30−xMx system, where M represents silver, cadmium or lead

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

“…6b asV th versus the temperature for Se 80 Te 15 Ge 5 films of different thicknesses. The obtained relations agree with those obtained before for other amorphous materials [8,9,15].…”

“…5b. The obtained relation agrees with results obtained before for other chalcogenide glasses [8,9,15]. Moreover, I-V characteristic curves for all the investigated film compositions of approximately the same thickness are illustrated in Fig.…”

“…The obtained values of this ratio are given in Table 4. It is found that the mean value of the ratioε V th /E σ2 ≈ 0.5, agrees with that obtained theoretically on the basis of the electrothermal model for the switching process [8,9] and those obtained before for other semiconducting compositions [15,[17][18][19].…”

“…The obtained values, given in Table 5 are in good agreement with those obtained for other amorphous semiconductor films [8,15,19,22,23]. Moreover, the agreement of the obtained values of the ratioε/E σ2 given in Table 4 with those values obtained earlier and derived theoretically [9] for the breakdown process, it can be concluded that the observed memory type switching can be interpreted on the basis of an electrothermal breakdown process.…”

Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin films

“…The same behavior obtained for all films of the other compositions. The obtained relations agree with those obtained before for other amorphous materials [9,10,39]. If T increases, the thermal energy required for the transformation of the channel material (filament) from amorphous to crystalline state will be lower.…”