Electrical properties of alumina films grown on Si at low temperature using catalytic CVD

Effects of post-deposition annealing temperature and time on physical properties of metal-organic decomposed lanthanum cerium oxide thin film

“…In this regime, unacceptably large leakage currents and reliability concerns accelerate substantial effort in searching for a gate oxide with higher dielectric constant (k) than SiO 2 (k=3.9), allowing the utilization of physically thick gate oxide with electrically equivalent oxide thickness (EOT). Numerous high-k gate oxides, such as Al 2 O 3 [2][3][4], ZrO 2 [5][6], and HfO 2 [7][8][9] have been employed on Si substrate. Al 2 O 3 is also a promising candidate for replacing SiO 2 .…”

“…Nevertheless, it is also the most unstable REO because the hygroscopic 3 nature of La 2 O 3 easily turns into La(OH) 3 on reaction with ambient water [15,[25][26]. The moisture absorption of La 2 O 3 films is partly attributed to the oxygen vacancies in the films [27].…”

Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944nm high power diode laser

“…Alumina combines many useful properties such as high dielectric constant, high thermal conductivity, good stability, relatively low refractive index and transparency over wide range of wavelength [21,22]. These properties causes alumina film has various applications such as microelectronic devices, optoelectronics, resistive coatings, corrosion protective coating material and surface passivation of diode lasers and solar cells because of high dielectric constant, wide band gap, and high temperature operation [22].…”

Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si

“…Lim · Z. Lockman · K.Y. Cheong [3][4][5], ZrO 2 [6,7], HfO 2 [8][9][10], La 2 O 3 [11][12][13][14], Y 2 O 3 [15][16][17], and CeO 2 [18][19][20]. Among the aforementioned high-k oxides, La 2 O 3 is the most unstable oxide due to its hygroscopic nature to form La(OH) 3 upon reaction with ambient water [14,21,22].…”