Electrical properties and thermal stability of ion beam deposited BN thin films

Ronning, Carsten; Dreher, Eberhard-Ludwig; Feldermann, H.; Gross, M. E.; Sebastian, Mailadil Thomas; Hofsäß, H.

doi:10.1016/s0925-9635(97)00021-6

Cited by 58 publications

(27 citation statements)

References 23 publications

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“…Ronning et al [270] have reported a resistivity ( p) of 10 9-10'" fl cm for predominantly cBN films: which is close to the reported intrinsic value for bulk cBN. Recent work on GaN, a similar wide-bandgap material, has shown excellent performance as a light-emitting diode operating in the blue region of the spectrum [271].…”

Section: Electronic Propertiessupporting

confidence: 60%

“…Sullivan et al [284] measured the dielectric constants of BN films with 2 85% cBN deposited by ion-assisted PLD and found E= 6.5-8.0, close to bulk cBN. while Ronning et al [270] found the slightly higher values of E= 8-10 for their cBN films. tBN films deposited by ion-assisted PLD also had dielectric constants close to bulk values [284].…”

Section: Electronic Propertiesmentioning

confidence: 75%

See 1 more Smart Citation

Review of advances in cubic boron nitride film synthesis

Mirkarimi¹,

McCarty²,

Medlin³

1997

Materials Science and Engineering: R: Reports

597

349

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Cubic boron nitride (cBN) has a number of highly desirable mechanical, thermal, electrical, and optical properties. Because of this, there has been an extensive worldwide effort to synthesize thin films of cBN. Film synthesis is difficult in that without significant levels of ion bombardment during growth, only sp2-bonded BN forms, not sp3-bonded cBN. Recently there has been considerable progress in improving the deposition techniques and cBN film quality. In addition, progress has been made in understanding how energetic deposition conditions can lead to cBN formation. However, unanswered questions remain and process improvements are still needed. In this paper we critically and comprehensively review recent developments in cBN film synthesis and characterization. First, the structures and stability of the BN phases and characterization techniques are described. Next, the key experimental parameters controlling cBN film formation and synthesis techniques are discussed. Following a review of microstructure, the proposed mechanisms of cBN formation and the observed mechanical and electrical properties of cBN films are analyzed. We conclude by highlighting the current impediments to the practical realization of cBN-film technology. 0 1997 Published by Elsevier Science S.A.

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Section: Electronic Propertiessupporting

confidence: 60%

Section: Electronic Propertiesmentioning

confidence: 75%

Review of advances in cubic boron nitride film synthesis

Mirkarimi¹,

McCarty²,

Medlin³

1997

Materials Science and Engineering: R: Reports

597

349

View full text Add to dashboard Cite

show abstract

“…Each crystallite may be more or less perfect; most of them may contain a varying number of point defects such as vacancies or dangling bonds. When BN material is produced in thin film form at low temperature without special precautions, a turbostratic structure is unavoidable [23]. Relatively far from the substrate, these sp 2 bonded hexagonal BN planar crystallites, which are relatively defect free, can have random orientations (i.e., rotated more or less around c-axis).…”

Section: Atomic Configuration and Energy Band Structurementioning

confidence: 99%

Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements

Özdemi̇r

Anutgan

Aliyeva-Anutgan

et al. 2009

Journal of Alloys and Compounds

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“…For transition metal diborides (TmB 2 ), the addition of nitrogen atoms is usually expected to cause a further improvement on the application-related properties. For instance, the hardness of the Tm-B-N films can be increased by the solid solution strengthening mechanism [8] ; the formation of the thermodynamically stable phase h-BN is generally believed to improve the lubricating properties of the films because of its graphite-like layered structure and low hardness [9][10][11] ; the oxidation resistance and the high temperature stability of the films can be enhanced due to the boron nitrogen compounds (h-BN, c-BN) [12][13][14] . More importantly, N 2 is cheap and easy to get.…”

Section: Introductionmentioning

confidence: 99%