Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells

Mamakin, S. S.; Yunovich, A. E.; Wattana, A. B.; Manyakhin, F. I.

doi:10.1134/1.1610129

Cited by 13 publications

(20 citation statements)

References 9 publications

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“…One can see that the predicted internal and measured external efficiencies correlate with each other and even are in quantitative agreement, if the efficiency of light extraction from the LED and its collection by the measuring system is assumed to be of ~ 11%. The internal efficiency is found to depend drastically on the donor concentration in the MQW barriers, especially at low currents, which is confirmed by the data reported in [6].…”

Section: Resultssupporting

confidence: 89%

“…Blue MQW LED heterostructure similar to those examined in [4,6] -3 . All the epilayers are considered to be grown coherently on the thick GaN:Si contact layer, i.e.…”

Section: Resultsmentioning

confidence: 95%

“…Wavelength (nm) Fig.2 shows the internal emission efficiency (the ratio of the photon emission rate to the rate of electronhole pair injection in the LED structure) as function of current density computed for various donor concentrations in the MWQ barriers. For comparison, the external efficiency measured in [6] is also plotted in the figure. One can see that the predicted internal and measured external efficiencies correlate with each other and even are in quantitative agreement, if the efficiency of light extraction from the LED and its collection by the measuring system is assumed to be of ~ 11%.…”

Section: Resultsmentioning

confidence: 99%

“…The I-V characteristic of the MQW LED computed for the serial resistance of R S = 7 Ω is compared with that measured on the sample b026 in [6] (Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

“…This research was stimulated by the reported improvement of the LED efficiency and wavelength stability due to the use of the enhanced barrier doping [4,6].…”

Section: Introductionmentioning

confidence: 98%

See 4 more Smart Citations

Modelling study of MQW LED operation

Mymrin¹,

Bulashevich²,

Podolskaya³

et al. 2005

phys. stat. sol. (c)

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PACS 78.60.Fi, 85.60.Bt, 85.60.Jb Operation of multiple-quantum-well (MQW) light emitting diode (LED) heterostructures with selective barrier doping is studied by modelling. The carrier confinement in the MQW LEDs and the effects of barrier doping on the emission efficiency and wavelength stability is examined in detail. The simulations predict improvement of the LED performance by heavy n-doping of the MWQ barriers. The theoretical predictions are compared with available experimental data.

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Section: Resultssupporting

confidence: 89%

“…Blue MQW LED heterostructure similar to those examined in [4,6] -3 . All the epilayers are considered to be grown coherently on the thick GaN:Si contact layer, i.e.…”

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

“…The I-V characteristic of the MQW LED computed for the serial resistance of R S = 7 Ω is compared with that measured on the sample b026 in [6] (Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

“…This research was stimulated by the reported improvement of the LED efficiency and wavelength stability due to the use of the enhanced barrier doping [4,6].…”

Section: Introductionmentioning

confidence: 98%

See 3 more Smart Citations

Modelling study of MQW LED operation

Mymrin¹,

Bulashevich²,

Podolskaya³

et al. 2005

phys. stat. sol. (c)

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Visible Light‐Emitting Diodes

Karpov¹

2007

Nitride Semiconductor Devices: Principles and Simulation

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IntroductionSince the first demonstration of high-brightness blue light-emitting diodes (LEDs) in the early 90s [1,2], group-III nitride semiconductors have gone a long way from being just promising materials in the industrial world to the basis for modern visible and ultra-violet (UV) optoelectronics. This has happened, on the one hand, due to the unique physical properties of these semiconductors, namely, a direct bandgap that could be varied from 0.65 to 6.2 eV, depending on the III-nitride alloy composition [3][4][5]; and, on the other, to reliable and effective p-doping demonstrated in earlier studies [6,7]. Very quickly, blue III-nitride LEDs were capable of providing an emission efficiency suitable for application, in spite of an extremely high threading dislocation density (TDD), ∼10 8 -10 10 cm −2 , inherent in epitaxial materials on mismatched sapphire or SiC substrates. This breakthrough stimulated an enormous amount of activity in III-nitride semiconductor technology, and soon the practical achievements outpaced the understanding of physical mechanisms underlying the LED operation. In part, this was caused by some novel physical factors, such as electrical spontaneous polarization and a strong piezoeffect [8,9], the significance of which for LED operation was recognized only after a remarkable delay.The research and development stage has been completed with a world-wide mass production of III-nitride LEDs, establishing new targets aimed at improving the device performance; primarily brightness and efficiency. These targets require a deeper insight into the physics of LED operation, as further effort can no longer rely on the intuitive design of LED heterostructures and analogy with conventional III-V devices. As the potential of many experimental approaches to LED optimization is likely to be almost exhausted, the role of theoretical work in the further improvement of device performance has become much more important.

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Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

Rozhansky

Zakheim

2007

Physica Status Solidi (a)

201

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In this paper we argue that the quenching of external quantum efficiency (EQE) with increase of current typically observed for AlInGaN LEDs is caused by reduction of injection efficiency. It is shown as a result of numerical simulations that the current blocking AlGaN layer is inefficient at high current density due to piezoelectric field of GaN/AlGaN interface. The results of numerical simulation are in good agreement with experimental dependence of EQE on pumping. A new design of LED heterostructure is proposed, for which the EQE quenching is not expected.

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Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells

Cited by 13 publications

References 9 publications

Modelling study of MQW LED operation

Modelling study of MQW LED operation

Visible Light‐Emitting Diodes

Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

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