PACS 78.60.Fi, 85.60.Bt, 85.60.Jb Operation of multiple-quantum-well (MQW) light emitting diode (LED) heterostructures with selective barrier doping is studied by modelling. The carrier confinement in the MQW LEDs and the effects of barrier doping on the emission efficiency and wavelength stability is examined in detail. The simulations predict improvement of the LED performance by heavy n-doping of the MWQ barriers. The theoretical predictions are compared with available experimental data.

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The double heterostructure (DHS) high-electron mobility transistor (HEMTs) grown by ammonia molecular beam epitaxy (MBE) is investigated both experimentally and theoretically. The band diagram and the sheet 2D electron concentration are computed, predicting alternating electron and hole slabs to co-exist in the structure. The DC characteristics of the DHS HEMT with the 1 µm gate are measured to asses the device performance. A breakdown threshold up to ~200 V is demonstrated for the source/drain voltage in DC operation. The parameters of the DHS and conventional AlGaN/GaN single-heterostructure HEMTs are compared.