Field‐effect transistors based on AlGaN/GaN/AlGaN double‐heterostructures grown by MBE

Abstract

The double heterostructure (DHS) high-electron mobility transistor (HEMTs) grown by ammonia molecular beam epitaxy (MBE) is investigated both experimentally and theoretically. The band diagram and the sheet 2D electron concentration are computed, predicting alternating electron and hole slabs to co-exist in the structure. The DC characteristics of the DHS HEMT with the 1 µm gate are measured to asses the device performance. A breakdown threshold up to ~200 V is demonstrated for the source/drain voltage in DC operation. The parameters of the DHS and conventional AlGaN/GaN single-heterostructure HEMTs are compared.