Electrical Performance of Large-Area Y₂O₃ Memristive Crossbar Array With Ultralow C2C Variability

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

“…115 Interfacial memristors typically feature better device uniformity over filamentary ones due to the nonlocalized switching mechanism. 261 However, improvements in uniformity may be achieved at the cost of sacrificing analogue properties and retention. For example, a lower energy barrier for memory mechanism (and hence lower retention) is typical for interfacial and solid-state electrolyte memristors and devices with submicroamp-level write currents.…”

“…In the previous decade, there has been a significant effort in developing passively integrated memory crossbar circuits, ,,,,,,,− with industry primarily focusing on simpler memory applications. − ,, For example, the published results supported with proper crossbar array statistics include metal-oxide filamentary ,,,, and interfacial, , solid-state-electrolyte, , and 2D-material memory devices . However, the focus now has mainly shifted to sparser, actively integrated (“1T1R”) memristive crossbar circuits in which each memory device is coupled with a “select” transistor .…”

“…A more advanced approach of engineered threading dislocations resulted in the smallest variations reported for the integrated crossbar circuit based on filamentary devices . Interfacial memristors typically feature better device uniformity over filamentary ones due to the nonlocalized switching mechanism . However, improvements in uniformity may be achieved at the cost of sacrificing analogue properties and retention.…”

Experimental Validation of Switching Dependence of Nanoscale Y2O3 Memristors on Electrode Symmetry via Physical Electrothermal Modeling

“…Recently, our research group has successfully fabricated Y 2 O 3 -based memristive crossbar arrays on 3 inch-diameter Si substrates with record-high endurance and retention properties and device production yield along with low device-to-device (D2D) and ultralow cycle-to-cycle (C2C) variability parameters. , To further extend the commercial viability of the Y 2 O 3 -based memristor, it is critical to thoroughly investigate the role of electrode materials in device switching. Therefore, in this work, for the first time in the literature, we thoroughly investigate the various simulated characteristics of the Y 2 O 3 memristor with symmetric and asymmetric electrode combinations via physical electrothermal modeling with the corresponding experimental validation.…”

“…Therefore, in this work, for the first time in the literature, we thoroughly investigate the various simulated characteristics of the Y 2 O 3 memristor with symmetric and asymmetric electrode combinations via physical electrothermal modeling with the corresponding experimental validation. Also, the symmetric electrode-based simulated results are thoroughly experimentally validated. , The presented simulation study is based on the quantitative thermodynamic numerical model of the memristor, which is further correlated with the free energy of the utilized materials. Here, memristors are designed and modeled in COMSOL Multiphysics, which helps to solve the partial differential equations by utilizing the finite element method (FEM).…”