Electrical, optical, and structural properties of thin films with tri-layers of AZO/ZnMgO/AZO grown by filtered vacuum arc deposition

Gontijo, Leonardo Cabral; Cunha, Ana Cristina Barros da; Nascente, P. A. P.

doi:10.1016/j.mseb.2012.09.002

Cited by 14 publications

(2 citation statements)

References 35 publications

(45 reference statements)

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“…E g value of ZnO¯lms was¯rst increased and then decreased with the increase of In doping concentration. Burstein-Moss e®ect 19,20 was used to explain this conclusion. With a small amount of Al doping in ZnŌ lms, donor electronic occupied part of the conduction band, which made the excitation of valence electronic become di±cult and need more energy.…”

Section: Transmittance Analysismentioning

confidence: 99%

EFFECT OF Al DOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS

Cai

Hou

et al. 2014

Surf. Rev. Lett.

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Al doped ZnO (AZO) thin¯lms were deposited on a glass substrate by atmospheric pressure chemical vapor deposition (APCVD) method. E®ect of Al doping concentration on microstructure, photoelectric properties and doped mechanism of AZO thin¯lms were investigated. The analysis results revealed that the structural properties of the¯lms possessed crystalline structure with a preferred (002) orientation. The best crystallization quality and minimum electrical resistivity was obtained at 5 at.% Al doped¯lms and the minimum resistivity was 6:6 Â 10 À4 Á cm. Uniform granular grains were observed on the surface of AZO¯lms, and the average optical transmittance was above 80% in the visible range. The doped mechanism of AZO¯lms was analyzed as follows. With Al doping in ZnO¯lms, Al Zn substitute and Al i interstice were produced, which decreased the resistivity of¯lms. While after the limit value and with the continuing increase of Al doping concentration, free electrons were consumed and the resistivity of¯lms increased.

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Section: Transmittance Analysismentioning

confidence: 99%

EFFECT OF Al DOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS

Cai

Hou

et al. 2014

Surf. Rev. Lett.

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“…Transparent conducting oxides (TCOs) are attracting attention because of their potential application in transparent electronics. [1][2][3][4][5] Widely used in flat panel displays, 6,7) touch panels, 8) light-emitting diodes, 9,10) low-e glass, 11) defroster glass, 12) and solar cells, [13][14][15] most TCOs, such as indiumdoped tin oxide (ITO) and aluminum-or gallium-doped zinc oxide (AZO, GZO), are n-type materials. 16,17) The crucial step in the development of electronic devices such as transparent diodes, transparent transistors, UV-LEDs, and tandem photovoltaic cells is the fabrication of a p-n junction.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Transparent CuCrO₂:Mg/ZnO p–n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate

Chen

Wang

Chiu

et al. 2013

Jpn. J. Appl. Phys.

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Transparent p–n junctions composed of zinc oxide and magnesium-doped copper–chromium oxide thin films were prepared using radio-frequency (RF) magnetron sputtering deposition on indium–tin oxide glass substrates. The temperature of the substrate during deposition was varied to examine differences in the diode characteristics of the current–voltage response effect. The crystalline structure of the diode films was verified using X-ray diffraction (XRD) analysis. The ratio of the forward current to the reverse current reached 85.9 in the range of +4 to -4 V at a deposition temperature of 450 °C. The p–n junction diode film had an optical transparency above 75% for wavelengths in the visible range.

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The impact of SnMnO2 TCO and Cu2O as a hole transport layer on CIGSSe solar cell performance improvement

Kumar,

Pushkar

et al. 2023

J Comput Electron

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This paper has simulated two experimental CIGSSe thin-lm solar cells (TFSCs) having a high e ciency of 20% and 22.92%. Later validates the photovoltaics results of both devices based on the experiential values of optoelectronics data. After the simulation, a compelling result was con rmed for both the experimental and simulation solar cells. Finally, different designs have also been proposed. The proposed Type-1 solar cell is designed by the addition of low resistivity, wide energy bandgap (E g ), and minimum absorption coe cient (α) based tin-doped manganese oxide (Sn 1 − x Mn x O 2 ) material in a conventional solar cell instead of ZnO: B and ZnMgO: Al transparent conducting oxides (TCO) layer. Further, by matching the band energy alignment and adjusting the thickness and doping concentration of the TCO, buffer, and absorber layers, the e ciency of the proposed Type-1 TFSC has been increased from 20 to 27.75%. The proposed Type-1 solar cell has some drawbacks, such as the inability to appropriately suppress the photogenerated minority carrier recombination losses due to the absence of a hole transport layer (HTL), and the EQE is relatively lesser than the conventional solar cell. Furthermore, wide band energy and a high 'α' based on cuprous oxide (Cu 2 O) as a HTL are added between the absorber and the back ohmic contact layers in the proposed Type-1 solar cell. Then the structure becomes a proposed Type-2 TFSC.The proposed Type-2 TFSC absorbs more blue light, instantly suppressing the recombination losses and enhancing e ciency (29.01%) and EQE (97%).

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Electrical, optical, and structural properties of thin films with tri-layers of AZO/ZnMgO/AZO grown by filtered vacuum arc deposition

Cited by 14 publications

References 35 publications

EFFECT OF Al DOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS

EFFECT OF Al DOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS

Fabrication of Transparent CuCrO₂:Mg/ZnO p–n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate

The impact of SnMnO2 TCO and Cu2O as a hole transport layer on CIGSSe solar cell performance improvement

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Electrical, optical, and structural properties of thin films with tri-layers of AZO/ZnMgO/AZO grown by filtered vacuum arc deposition

Cited by 14 publications

References 35 publications

EFFECT OF Al DOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS

EFFECT OF Al DOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS

Fabrication of Transparent CuCrO2:Mg/ZnO p–n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate

The impact of SnMnO2 TCO and Cu2O as a hole transport layer on CIGSSe solar cell performance improvement

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Fabrication of Transparent CuCrO₂:Mg/ZnO p–n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate