Al doped ZnO (AZO) thin¯lms were deposited on a glass substrate by atmospheric pressure chemical vapor deposition (APCVD) method. E®ect of Al doping concentration on microstructure, photoelectric properties and doped mechanism of AZO thin¯lms were investigated. The analysis results revealed that the structural properties of the¯lms possessed crystalline structure with a preferred (002) orientation. The best crystallization quality and minimum electrical resistivity was obtained at 5 at.% Al doped¯lms and the minimum resistivity was 6:6 Â 10 À4 Á cm. Uniform granular grains were observed on the surface of AZO¯lms, and the average optical transmittance was above 80% in the visible range. The doped mechanism of AZO¯lms was analyzed as follows. With Al doping in ZnO¯lms, Al Zn substitute and Al i interstice were produced, which decreased the resistivity of¯lms. While after the limit value and with the continuing increase of Al doping concentration, free electrons were consumed and the resistivity of¯lms increased.
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