Electrical, optical and annealing characteristics of ZnO:Al films prepared by spray pyrolysis

Aktaruzzaman, A.F.; Sharma, Govind; Malhotra, L.K.

doi:10.1016/0040-6090(91)90325-r

Cited by 181 publications

(66 citation statements)

References 17 publications

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“…13 The charge carrier mobility and concentration in ZnO can be further enhanced by the inclusion of dopant atoms, typically group III elements 14,15 or by the creation of intrinsic defects via thermal treatments under vacuum, argon or hydrogen environments. 16 For the thermal treatments several mechanisms have been proposed, namely the creation of V O 17 which act as point defects contributing two electrons to the conduction band. However such defects are considered deep donors -hence this mechanism is unlikely, particularly in the bulk.…”

Section: Introductionmentioning

confidence: 99%

“…Doping of oxide semiconductors using SP has been well studied as a means of enhancing free carrier mobility and increasing conductivity. 12,16,32,34 With particular reference to group III dopants in ZnO numerous reports have been made 17,35,36 , the general observation is that above an optimum doping level performance Compressed air was used as a carrier gas with a spray rate of 10 ml/min. Regular pauses to the deposition were used to allow the substrate to return to the set temperature.…”

Section: Introductionmentioning

confidence: 99%

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Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

et al. 2016

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© 2016 The Royal Society of Chemistry.The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1-3 at%. Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using AC Hall as a measurement technique we probe the electronic properties of our doped films, deconvoluting the impact of doping on the measured charge carrier concentrations and Hall mobility. We focus on the low doping range i.e. 0.1-1 at%, where we observe unexpected variations in charge carrier concentration and mobility and propose a mechanism to explain our observations. In this doping range highly resistive films are formed hence we highlight AC Hall as a reliable and highly reproducible technique for analysing electrical properties and subsequently elucidate the doping mechanisms. The implementation of a simple, post-deposition heat treatment demonstrated on our AZO results in typical films with charge carrier concentrations exceeding >1019 cm-3, and electron mobilities >10 cm2 V-1 s-1 and stability exceeding 180 days. We describe in detail the nature of the defect chemistry and the role of intrinsic defects and show, that despite significant variations in dopant species and grain boundary concentrations, that the defect chemistry dominates the electrical characteristics

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

et al. 2016

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“…The interest in doping ZnO is to explore the possibility of tailoring its electrical, magnetic and optical properties [4][5][6][7][8]. Such films could be used in areas like electronics, optoelectronics and could be a potential challenger to other oxides such as SnO 2 and Indium-Tin Oxides (ITO).…”

Section: Introductionmentioning

confidence: 99%

Influence of Mn doping on the microstructure and optical property of ZnO

Senthilkumaar

Rajendran²,

Banerjee

et al. 2008

Materials Science in Semiconductor Processing

291

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Undoped and Mn doped ZnO samples with different percentage of Mn content (1 mol%, 2 mol% and 3mol%) were synthesized by a simple solvo-thermal method. We have studied the structural, chemical and optical properties of the samples by using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray (EDX) analysis, Fourier transform infrared (FTIR) spectroscopy and UV-VIS spectroscopy. The XRD spectra show that all the samples are hexagonal wurtzite structures. The lattice parameters calculated for the Mn doped ZnO from the XRD pattern were found to be slightly larger than those of the undoped ZnO, which indicates substitution of Mn in ZnO lattice. SEM photograph shows the grain size of undoped ZnO is bigger than the Mn doped ZnO's indicating hindrance of grain growth upon Mn doping. As the Mn doping increases the optical band gap decreases for the range of Mn doping reported here.

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“…There are several deposition techniques that have been reported to successfully produce AZO thin films. These include chemical vapor deposition [10], magnetron sputtering [11], spray pyrolysis [12], and pulsed laser deposition [13].…”

mentioning

confidence: 99%

Compensation in Al-Doped ZnO by Al-Related Acceptor Complexes: Synchrotron X-Ray Absorption Spectroscopy and Theory

et al. 2013

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The synchrotron x-ray absorption near edge structures (XANES) technique was used in conjunction with first-principles calculations to characterize Al-doped ZnO films. Standard characterizations revealed that the amount of carrier concentration and mobility depend on the growth conditions, i.e. H 2 ðor O 2 Þ=Ar gas ratio and Al concentration. First-principles calculations showed that Al energetically prefers to substitute on the Zn site, forming a donor Al Zn , over being an interstitial (Al i ). The measured Al K-edge XANES spectra are in good agreement with the simulated spectra of Al Zn , indicating that the majority of Al atoms are substituting for Zn. The reduction in carrier concentration or mobility in some samples can be attributed to the Al Zn -V Zn and 2Al Zn -V Zn complex formations that have similar XANES features. In addition, XANES of some samples showed additional features that are the indication of some -Al 2 O 3 or nAl Zn -O i formation, explaining their poorer conductivity.

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Electrical, optical and annealing characteristics of ZnO:Al films prepared by spray pyrolysis

Cited by 181 publications

References 17 publications

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Influence of Mn doping on the microstructure and optical property of ZnO

Compensation in Al-Doped ZnO by Al-Related Acceptor Complexes: Synchrotron X-Ray Absorption Spectroscopy and Theory

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