2016
DOI: 10.1039/c5tc03636d
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Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Abstract: © 2016 The Royal Society of Chemistry.The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1-3 at%. Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using AC Hall as a measurement technique we probe the electronic properties of our doped films, deconvoluting the impact of doping on the measured charge carrier concentrations and Hall mobility. We focus on the low … Show more

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Cited by 16 publications
(6 citation statements)
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“…Figure 1a displays the diffractograms of the different ZnO thin films prepared by the chemical spray pyrolysis technique. In all samples, the diffractograms show the same peaks indicating that the crystal structure of the specimens is hexagonal (wurtzite) with highly preferential orientation along [002], in good agreement with previous results reported by Lim, J. H. et al, [42] and Maller et al [43] for Al, Ga and In-doped ZnO. No additional peaks due to segregated Y-rich phases were found in any of the investigated films, indicating a high phase homogeneity and hence, a good incorporation of Y 3+ ions into the host ZnO matrix.…”
Section: Resultssupporting
confidence: 90%
“…Figure 1a displays the diffractograms of the different ZnO thin films prepared by the chemical spray pyrolysis technique. In all samples, the diffractograms show the same peaks indicating that the crystal structure of the specimens is hexagonal (wurtzite) with highly preferential orientation along [002], in good agreement with previous results reported by Lim, J. H. et al, [42] and Maller et al [43] for Al, Ga and In-doped ZnO. No additional peaks due to segregated Y-rich phases were found in any of the investigated films, indicating a high phase homogeneity and hence, a good incorporation of Y 3+ ions into the host ZnO matrix.…”
Section: Resultssupporting
confidence: 90%
“…In Table S1 (Supporting Information), we provide the peak positions of the diffraction peaks observed, no discernable change in position is seen with varying the MAI concentration. We would anticipate that if the MAI was uptaken into the perovskite lattice, the resultant defects would cause changes of lattice parameter, the magnitude of which would be within the detection limits of XRD . We observe a large increase of measured full width at half maximum (FWHM) in the 10% MAI excess film, suggesting a reduction of crystallite size, possibly due to the morphological disruption, shown by the SEM images.…”
Section: Resultsmentioning
confidence: 77%
“…This reduction in mobility is the cumulative effect of a sudden increase in resistivity and a reduced carrier concentration. The observed reduction in mobility is caused by high-ionized impurity scattering in conjunction with high charge–charge/charge–phonon interaction . With further increase in T g to 600 °C, an abrupt increase in mobility is observed.…”
Section: Resultsmentioning
confidence: 92%