Electrical conduction mechanism in a-Se_80-xTe_xGa₂₀films (0<or=x<or=20)

Abstract

The dark conductivity and transient photoconductivity measurements on thin films of a-Se80-xTexGa20 (0<or=x<or=20) have been reported in the temperature range from 148 to 318 K. The results indicate that, at higher temperatures, hopping conduction takes place in the tail states. At lower temperatures the conduction is due to variable-range hopping, which is in fair agreement with the Mott condition of variable-range hopping. The transient photoconductivity measurements show non-exponential decay, and recombination in these glasses may be considered to take place through the valence and conduction bands.

Synthesis, characterization and properties of Se nanowires intercalated polyaniline/Se nanocomposites

“…The DC conductivity of both undoped and doped composites is in good agreement with the Arrhenius relation [12], shown by Equation (3): (3) where #E is the activation energy, k b is Boltzmann constant; T is temperature and ! 0 is the pre-exponential factor.…”

Thermal and electric transport properties of (60−x)V2O5–xAs2O3–20Fe2O3–10CaO–10Li2O unconventional glassy system

“…From the last results it was found that the dc conductivity and the corresponding activation energy decrease with increasing the As 2 O 3 contents Table 2. The decreases of dc conductivity with the corresponding decreases in activation energy are found to be associated with a shift of the Fermi level in the semi conducting glasses [21]. The activation energy decreases is due to an increases of the density of localized states in the band gab near the Fermi level [22,23].…”

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

“…for the range of the localization wave decay lengths, estimated in the literature to be 0.2 nm −1 < α < 1 nm −1 [29,31,[36][37][38]. Consequently, the optimum hopping length, l 0 , and energy, W , can be calculated [29,36,37]:…”