Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

Goldfarb, I.; Miao, Feng; Yang, J. Joshua; Yi, Wei; Strachan, John Paul; Zhang, M.-X.; Pickett, Matthew D.; Medeiros‐Ribeiro, G.; Williams, R. Stanley

doi:10.1007/s00339-012-6856-z

Cited by 60 publications

(43 citation statements)

References 43 publications

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“…In figure 4 (b) and figure 4 (c), ln (R) versus T −1/4 are plotted, where both experimental curves are well-fitted with equation (1). Therefore, N(E F ) could be extracted based on T 0 (from the fitting slopes) and α (0.2 nm −1 which is estimated from literatures24252627). Consequently, the hopping distance l 0 and activation energy W could be obtained from: …”

Section: Results and Disscussionmentioning

confidence: 99%

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

Bai

et al. 2014

Sci Rep

110

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Three-dimensional (3D) integration and multi-level cell (MLC) are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlOδ/Ta2O5-x/TaOy resistive random access memories were fabricated and characterized. The vertical cells in three layers show good uniformity and high performance (e.g. >1000X HRS/LRS windows, >1010 endurance cycles, >104 s retention times at 125°C). Meanwhile, four level MLC is demonstrated with two operation strategies, current controlled scheme (CCS) and voltage controlled scheme (VCS). The switching mechanism of 3D vertical RRAM cells is studied based on temperature-dependent transport characteristics. Furthermore, the applicability of CCS and VCS in 3D vertical RRAM array is compared using resistor network circuit simulation.

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Section: Results and Disscussionmentioning

confidence: 99%

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

Bai

et al. 2014

Sci Rep

110

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“…This process is termed the SET process. [17,28,29] The localized high V O concentration regions in turn create V O concentration gradients that can lead to spontaneous V O diffusion and results in the retention failure at LRS. The small shift of the minimum current location to V= −0.03 V during RESET may be attributed to the nanobattery effect caused by the inhomogeneous distribution of charged defects.…”

Section: Perovskite Filmsmentioning

confidence: 99%

Iodine Vacancy Redistribution in Organic–Inorganic Halide Perovskite Films and Resistive Switching Effects

2017

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Organic-inorganic halide perovskite (OHP) materials, for example, CH NH PbI (MAPbI ), have attracted significant interest for applications such as solar cells, photodectors, light-emitting diodes, and lasers. Previous studies have shown that charged defects can migrate in perovskites under an electric field and/or light illumination, potentially preventing these devices from practical applications. Understanding and control of the defect generation and movement will not only lead to more stable devices but also new device concepts. Here, it is shown that the formation/annihilation of iodine vacancies (V 's) in MAPbI films, driven by electric fields and light illumination, can induce pronounced resistive switching effects. Due to a low diffusion energy barrier (≈0.17 eV), the V 's can readily drift under an electric field, and spontaneously diffuse with a concentration gradient. It is shown that the V diffusion process can be suppressed by controlling the affinity of the contact electrode material to I ions, or by light illumination. An electrical-write and optical-erase memory element is further demonstrated by coupling ion migration with electric fields and light illumination. These results provide guidance toward improved stability and performance of perovskite-based optoelectronic systems, and can lead to the development of solid-state devices that couple ionics, electronics, and optics.

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“…In active metallic filament devices, the ion migration, involving redox reactions and ion motility, leads to different filament growth modes . The stoichiometric change of the material in the redox process could introduce unwanted impurity‐driven doping, which affects the electronic structure of the material . In nonfilamentary synaptic devices working by other mechanisms such as charge trapping or detrapping, higher switching uniformity could be obtained.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Synaptic Devices Based on 2D Materials

Sun

Wang

Yang

2020

Advanced Intelligent Systems

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Diverse synaptic plasticity with a wide range of timescales in biological synapses plays an important role in memory, learning, and various signal processing with exceptionally low power consumption. Emulating biological synaptic functions by electric devices for neuromorphic computation has been considered as a way to overcome the traditional von Neumann architecture in which separated memory and information processing units require high power consumption for their functions. Synaptic devices are expected to conduct complex signal processing such as image classification, decision‐making, and pattern recognition in artificial neural networks. Among various materials and device architectures for synaptic devices, 2D materials and their van der Waals (vdW) heterostructures have been attracting tremendous attention from researchers based on their capacity to mimic unique synaptic plasticity for neuromorphic computing. Herein, the basic operations of biological synapses and physical properties of 2D materials are discussed, and then 2D materials and their vdW heterostructures for advanced synaptic operations with novel working mechanisms are reviewed. In particular, there is a focus on how to design synaptic devices with the vdW structures in terms of critical 2D materials and their limitations, providing insight into the emerging synaptic device systems and artificial neural networks with 2D materials.

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Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

Cited by 60 publications

References 43 publications

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

Iodine Vacancy Redistribution in Organic–Inorganic Halide Perovskite Films and Resistive Switching Effects

Recent Progress in Synaptic Devices Based on 2D Materials

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