Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon

Abstract

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Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy

“…The values of ΔE for E1 and E2 matched previous. [19][20][21][22][23] The values of σ app were within the range of previous DLTS studies with magnitudes of 10 −15 -10 −16 cm 2 . [20][21][22][23] The other candidates for origins of E1 and E2 in Cz-Si are VV, VO 2 * , V 2 O, and VO.…”

“…They behave as majority carrier traps in n-type Si wafers, resulting in reduction of the minority carrier lifetime after heat treatment at temperature ranges of 450 °C-700 °C. [19][20][21][22][23] However, such thermally activated defect behaviors in N-doped Cz-Si have not been reported. It is necessary to explore the defect behaviors in Ndoped Cz-Si to use as materials for IGBTs.…”

Temperature‐dependent performance of silicon heterojunction solar cells with transition‐metal‐oxide‐based selective contacts

“…) is used to measure τeff as a function of temperature (25 to 80 °C). 40 J0s is extracted from the τeff curves using the curve fitting features of Quokka 2 41 and the approach of Dumbrell et al. 42 The uncertainty in the extracted J0s is calculated from the uncertainty of photoconductance measurements using the approach of McIntosh et al.…”

“…Sinton lifetime tester (WCT-120TS) is used to measure τ eff as a function of temperature (25 C to 80 C). 40 J 0s is extracted from the τ eff curves using the curve fitting features of Quokka 2 41 and the approach of Dumbrell et al 42 The uncertainty in the extracted J 0s is calculated from the uncertainty of photoconductance measurements using the approach of McIntosh et al 43 The models of Schenk, 44 Richter et al 45 and Klaassen 46 are used to determine the effective intrinsic carrier concentration (n i,eff ), the intrinsic lifetime and the mobility, respectively. rent density (J sc ) increases at elevated temperatures.…”

Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study

“…[1] The addition of nitrogen gives rise to a family of defects which appear after heat treatment in the temperature range of 450-700 °C, and these defects lead to a strong decrease in minority carrier lifetime due to the origin of defect levels within the electronic bandgap. [2][3][4][5][6][7] There are numerous studies of these defect levels via deep-level transient spectroscopy (DLTS), [2][3][4][5][6][7][8][9][10] which typically identify the defect levels by their activation energy, but the microscopic origin of the defects is much less understood. Nonetheless, some studies [7,10] suggest that an electron trap residing around 0.34 eV below the conduction band corresponds to a nitrogen-vacancy (NV) pair, which matches closely with the reported value of 0.33 AE 0.02 eV for the off-center substitutional nitrogen atom as determined by electron paramagnetic resonance (EPR) spectroscopy.…”