Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study

Abstract

Defect states in nitrogen-containing float-zone silicon are investigated in both n-and p-type materials using both deep-level transient spectroscopy (DLTS) and minority-carrier transient spectroscopy (MCTS). This enables a mapping of the defect landscape in the entire electronic bandgap and an investigation of whether the properties of the defects depend on the semiconductor type. Two defects, the E1/E2 pair and the E4/E6 pair, are investigated, and no evidence is found for the defect properties to depend on the semiconductor type.