Electrical characterization of Ni/Au/AuGe contacts for quantum dot infrared photodetectors

Rana, Devendra Kumar; Srivastav, Vanya; Pal, R.; Yadav, B. S.

doi:10.1016/j.infrared.2011.07.003

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“…In the past decade, QDIPs (quantum dots infrared photodetectors) have already been proved to possess more efficiencies than other types of semiconductor photodetectors and have become a very hot field of research due to a broader infrared response, a higher photoconductive gain, a lower dark current and an increased operating temperature [1][2][3][4][5]. With the expanding and deepening of the detecting application, the needs for the high performance and the high quality QDIP may be continuously increasing in the future.…”

Section: Introductionmentioning

confidence: 99%