Performance investigations of quantum dot infrared photodetectors

Liu, Hongmei; Zhang, Jianqi

doi:10.1016/j.infrared.2012.03.001

Cited by 25 publications

(10 citation statements)

References 25 publications

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“…As we all know, the QDIP is mainly composed of the excited region including the barrier layers and the repetitive quantum dot composite layers, the top contact layer, and the bottom contact layer [2], [10]. When the infrared light irradiates the excited region of the photodetector, the electron transition will take place between the ground state and the excited state, which will change the conductivity of the QDIP, and the photocurrent will be formed in the circuit if a biased voltage is applied to the both ends of the photodetector, which can be written as…”

Section: Photocurrentmentioning

confidence: 99%

“…where hNi is the average electron number in a quantum dot which can be calculated by solving the dark current balance relationship [9], [10], [18]; furthermore, it can be written as…”

Section: Photocurrentmentioning

confidence: 99%

“…In 2010, Lin pointed out that the microscale transport and the nanoscale transport of the electrons coexist in the QDIP devices [8]. Based on this theory, Liu rebuilt the device models of the QDIP used to estimate the photocurrent, the responsivity and so on in 2012 [9], [10], and these models not only consider of the microscale electron transport and the nanoscale electron transport, but also include the influence of the thermal emission of the electrons, the field-assisted tunnelling emission and the continuous potential distribution. Through carefully observing these models above used to calculate the photodetection performance of the QDIP, we find that these models only consider the contribution of the capture of the electrons from the potential well of the quantum dot.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Photodetection of Infrared Photodetector Based on Surrounding Barriers Formed by Charged Quantum Dots

et al. 2015

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The photodetection performance of the quantum dot infrared photodetector (QDIP) is always a hot topic. In this paper, a model is proposed for the photocurrent of the QDIP, which not only considers the influence of the potential barrier around quantum dot on the photoconductive gain but includes the contribution of the quantum efficiency as well, based on the current balance relationship under dark conditions. The corresponding calculated results show a good agreement with the measured data, and they are furthermore used to calculate the responsivity, which can provide the device designers with the theoretical guidance for the optimization of the detector and the improvement of the device performance.

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Section: Photocurrentmentioning

confidence: 99%

“…where hNi is the average electron number in a quantum dot which can be calculated by solving the dark current balance relationship [9], [10], [18]; furthermore, it can be written as…”

Section: Photocurrentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photodetection of Infrared Photodetector Based on Surrounding Barriers Formed by Charged Quantum Dots

et al. 2015

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“…Quantum dot infrared photodetectors (QDIPs) are considered as a promising alternative for IR photodetection rather than the conventional photodetectors in mid-infrared spectrum (wavelength ~ 3-15 µm) [14]- [19]. QDIP devices generally consists of periodically quantum dots in repetitive barrier layers where the quantum dots con ne some electrons and allows inter-band transition.…”

Section: Introductionmentioning

confidence: 99%

“…QDIP devices generally consists of periodically quantum dots in repetitive barrier layers where the quantum dots con ne some electrons and allows inter-band transition. QDIP detect an infrared optical signal based on the electrons transition between band-continuum or band-band in QDs [19].…”

Section: Introductionmentioning

confidence: 99%

J–V characteristics of dark current in truncated conical quantum dot infrared photodetectors (QDIPs)

Ali

El-Batawy

2023

Opt Quant Electron

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Quantum Dot Infrared Photodetector (QDIP) is one of the promising candidates for infrared photodetection due to its controllable heterojunction bandgap and sensitivity to normal incident radiation. It is expected to be superior to infrared photodetectors of mature technologies such as Mercury Cadmium Telluride (HgCdTe) or a quantum well infrared photodetector. In the presented paper, we have developed a theoretical model for the dark current in truncated conical QDIP as the truncated conical shaped QD structure is more appropriate to describe the fabricated dots. The dark current model is based on the drift diffusion model solving the main governing Poisson’s and continuity equations. In this model, the carrier mobility is calculated by solving time-dependent Boltzmann transport equation in the photodetector material with embedded truncated conical QDs using finite difference technique. The results of the developed model have been compared with the dark current characteristics with published experimental results of Indium Arsenide/Gallium Arsenide (InAs/GaAs) truncated QDIP. The effects of QD volume, QD aspect ratio and QD density and the operating temperature on the dark current characteristics have also been investigated.

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