Electrical characterization of integrated circuits by scanning force microscopy

Böhm, Christoph; Roths, C.; Müller, Uwe; Beyer, Andreas; Kubalek, E.

doi:10.1016/0921-5107(94)90331-x

Cited by 8 publications

(4 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both use a uniformly charged line model and find a logarithmic distance dependency, which is confirmed by Yokoyama et al [224]. Also procedures to calculate the electrostatic force between metals precisely but numerically are described [225,226]. The contribution of the cantilever as a correction in particular at large distances was realized and described by several authors [227,228].…”

Section: Electrostatic Forcementioning

confidence: 50%

Force measurements with the atomic force microscope: Technique, interpretation and applications

Butt

Cappella

Kappl

2005

Surface Science Reports

3,207

2,949

View full text Add to dashboard Cite

Section: Electrostatic Forcementioning

confidence: 50%

Force measurements with the atomic force microscope: Technique, interpretation and applications

Butt

Cappella

Kappl

2005

Surface Science Reports

3,207

2,949

View full text Add to dashboard Cite

“…There will be less impact on the ac measurements [21][22][23] if the separation of signal lines carrying the ac signals is much larger than the cantilever size. The greatest impact will occur in dc measurements ͑the Kelvin mode͒, since the WF is essentially a dc signal with an infinite lateral extent.…”

Section: Discussionmentioning

confidence: 99%

Capacitive effects on quantitative dopant profiling with scanned electrostatic force microscopes

Hochwitz

Henning

Levey

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

A force-based scanning Kelvin probe microscope has been applied to the problem of dopant profiling in silicon. Initial data analysis assumed the detected electrostatic force couples the sample and only the tip at the end of a force sensing cantilever. Attempts to compare measurements quantitatively against device structures with this simple model failed. A significant contribution arises from the electrostatic force between the sample and the entire cantilever, which depends strongly upon the relative size of the tip, cantilever, and lateral inhomogeneities in the surface topography and material composition of the sample. Actual and simulated measurements which demonstrate the characteristic signature of this effect are presented.

show abstract

“…Another difficulty in quantifying the dielectric constant using EFM is the lack of a simple analytical model for obtaining electrostatic force quantitatively for a complex geometry of cantilever. Some analytical expressions to describe electrostatic force between the tip and metallic substrate proposed are the parallel plate capacitance model [29], the sphere model [30,31], the knife edge model [31,32], the perfect cone model [33] and the hyperboloid model [34]. In the present work we use a model which takes into consideration the geometry of the AFM tip.…”

Section: Introductionmentioning

confidence: 99%

Scanning Dielectric Constant Microscopy for imaging single biological cells

Valavade¹,

Date²,

Press³

et al. 2018

Biomed. Phys. Eng. Express

View full text Add to dashboard Cite

A method is developed for obtaining nanoscale dielectric constant maps of any material, using dynamic Electrostatic Force Microscopy (EFM) in conjunction with an analytical model by Hudlet et al for the tip-apex force, modified for dielectric material; and is applied for visualizing dielectric constant variation at sub-cellular level. The method is simple and does not rely on high-end electronics required for sub-attofarad resolution for capacitance measurement or resource intensive computation for specific geometry, but can be applied on available commercial Atomic Force Microscope (AFM). The method is not restricted to obtaining dielectric constant at a single point but it provides the determination of lateral variation in dielectric constant in a sample. The dielectric constant maps obtained using the modified Hudlet tip-apex model are compared with those obtained using the parallel plate and partially-filled parallel plate models. The accuracy of the dielectric constant values depends on the validity of the analytical model used. The dielectric constant values obtained using the modified Hudlet tip-apex model are in agreement with the reported values.

show abstract

Electrical characterization of integrated circuits by scanning force microscopy

Cited by 8 publications

References 11 publications

Force measurements with the atomic force microscope: Technique, interpretation and applications

Force measurements with the atomic force microscope: Technique, interpretation and applications

Capacitive effects on quantitative dopant profiling with scanned electrostatic force microscopes

Scanning Dielectric Constant Microscopy for imaging single biological cells

Contact Info

Product

Resources

About