Electrical characterization of He-plasma processed n-GaAs

Auret, F.D.; Meyer, W.E.; Deenapanray, Prakash; Goodman, S. A.; Myburg, G.; Murtagh, M.; Ye, Shu-Ren; Crean, G.M.

doi:10.1063/1.368329

Cited by 7 publications

(3 citation statements)

References 15 publications

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“…Effect of lattice defects in GaAs In the case of III-V compound semiconductors, there has been an intriguing application that converts a doped layer into a highly resistive one by ion irradiation of He + and other light particles [45]. However, a mechanism of the carrier removal by ion irradiation has not yet been fully understood by deep-level transient spectroscopy (DLTS) [46] and by Raman scattering spectroscopy [47] because the deep level is too deep to be observed by DLTS and little is known about the information of relaxation dynamics of carriers. A pump-probe isotropic reflectivity measurement of carriers in semiconductors with ultrashort light pulses has enabled us to study dynamics of photo-excited carriers, such as carriercarrier scattering, carrier-phonon scattering, and recombination of carriers [48].…”

Section: 12mentioning

confidence: 99%

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Interaction of coherent phonons with defects and elementary excitations

Hase

Kitajima

2010

J. Phys.: Condens. Matter

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We present an overview of the feasibility of using coherent phonon spectroscopy to study interaction dynamics of excited lattice vibrations with their environments. By exploiting the features of coherent phonons with a pump-probe technique, one can study lattice motions in a sub-picosecond time range. The dephasing properties tell us not only about interaction dynamics with carriers (electrons and holes) or thermal phonons but also about point defects in crystals. Modulations of the coherent phonon amplitude by more than two modes are closely related to phonon-carrier or phonon-phonon interferences. Related to this phenomenon, formation of coherent phonons at higher harmonics gives direct evidence for phonon-phonon couplings. A combined study of coherent phonons and ultrafast carrier response can be useful for understanding phonon-carrier interaction dynamics. For metals like zinc, nonequilibrium electrons may dominate the dynamics of both relaxation and generation of coherent phonons. The frequency chirp of coherent phonons can be a direct measure of how and when phonon-phonon and phonon-carrier couplings occur. Carbon nanotubes show some complicated behavior due to the existence of many modes with different symmetries, resulting in superposition or interference. To illustrate one of the most interesting applications, the selective excitation of specific phonon modes through the use of a pulse train technique is shown.

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Section: 12mentioning

confidence: 99%

“…Since deep levels are located below the donor levels [46], doped carriers as well as photo-generated carriers can be deeply trapped, both of which would affect the dephasing of the LOPC modes. In addition, there are enough single vacancies (≈ 2×10 18 cm −3 at 9.4×10 12 He + /cm 2 ) to trap almost all the doped carriers (1.4×10 18 cm −3 ).…”

Section: 12mentioning

confidence: 99%

Interaction of coherent phonons with defects and elementary excitations

Hase

Kitajima

2010

J. Phys.: Condens. Matter

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“…However, surface damage introduced by ion bombardment during the RIE process may cause serious degradation of device characteristics. 7,8 However, there have been only a few papers reporting on the effects of RIE processes on GaP crystals. 4 -6 The crystalline imperfection of waveguide walls induced by RIE may seriously influence the device performances such as optical absorption loss due to generated deep levels.…”

Section: Introductionmentioning

confidence: 99%

Photocapacitance of deep levels in GaP crystals surface treated by reactive ion etching

Hashimoto

Saito

Suto

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A method to determine deep level profiles in highly compensated, wide band gap semiconductors Damaged layers of GaP crystals surface treated by reactive ion etching using PCl 3 gas are evaluated by capacitance-voltage, secondary ion mass spectroscopy, and photocapacitance ͑PHCAP͒ measurements. The reduction of the carrier concentration is observed at the surface region within the depth of 60-70 nm, where Cl atoms injected with high energy are observed. PHCAP measurement reveals that density of the deep levels increases with decreasing gas pressure. The deep levels are thought to be the complexes of shallow donor impurities and intrinsic point defects.

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