Electrical characterization of Au/3C-SiC/n-Si/Al Schottky junction

Chung, Gwiy‐Sang; Kim, K.S.; Yakuphanoğlu, F.

doi:10.1016/j.jallcom.2010.08.004

Cited by 43 publications

(25 citation statements)

References 29 publications

(34 reference statements)

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“…The temperature dependence of electrical characteristics of these devices has been widely investigated in the literature [35][36][37][38][39][40][41][42][43][44][45][46]. In our previous work [20], we have investigated temperature and voltage dependent current transport mechanisms in GaAs/AlGaAs single-quantum-well lasers using forward and reverse bias I-V measurements in the temperature range of 80-360 K. The analysis of the experimental I-V data of the studied structures indicated that the current-transport was controlled by the Thermionic Field-Emission (TFE) mechanism below 170 K and Thermionic Emission (TE) mechanism above 200 K. The high values of n especially at low temperatures showed that the conduction is controlled by TFE [7,20].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

Bengi

Uslu

Asar

et al. 2011

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

Bengi

Uslu

Asar

et al. 2011

Journal of Alloys and Compounds

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“…2 should take a linear shape, it often deviates from the linear characteristics above a certain voltage. 31,32 This is due to the influence of series resistance. 29 Surface inhomogeneous morphology and defects such as stacking faults (SFs) (Figs.…”

Section: Resultsmentioning

confidence: 99%

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Liu

Guo

Shen

et al. 2016

ECS J. Solid State Sci. Technol.

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Although epitaxial growth of Si films on both surfaces of silicon wafer (epi-Si/Si-wafer/epi-Si) can be realized in foundry by means of mounting certain amounts of silicon wafers in a boat in commercial specialized chemical vapor deposition equipment (s-CVD), for its counterpart epi-SiC/Si-wafer/epi-SiC, neither is it readily realized in s-CVD, nor is it easily achieved in conventional chemical vapor deposition equipment (c-CVD) which is generally used for growth of 3C-SiC on single surface of silicon wafer (epi-SiC/Si-wafer). Since the growth of epi-SiC/Si-wafer/epi-SiC in one run is more efficient, and is anticipated, in this work, we demonstrated a facile method for growth of epi-SiC/Si-wafer/epi-SiC in c-CVD. The Si wafer was double-side polished and mounted in a suspension mode on the susceptor in the c-CVD chamber. It was found that homogeneous 3C-SiC(100) films were heteroepitaxially grown on both surfaces of the suspended Si(100) wafer simultaneously. The structural and electrical properties of the obtained 3C-SiC films on both surfaces were investigated by means of SEM, XRD, Raman and J-V measurements. Results showed that each film was uniform and continuous, with same trend of slight degradation from the inner to the outer region of the wafer. This indicated a possible way of making mass production of high quality 3C-SiC films on Si wafers in one run in c-CVD for the potential applications such as sensors, with working principle based on voltage drop difference of two back-to-back diodes on epi-SiC/Si-wafer/epi-SiC, or graphene growth from epi-SiC/Si-wafer/epi-SiC templates.

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“…SiC is an ideal choice for manufacturing devices designed to work at high temperature, high power, and high voltage. These properties have garnered increased interest in the use of SiC in many high-performances in micro/nano-technology devices and they are better for 3C-SiC (heteroepitaxial) than for the hexagonal SiC (4H-and 6H-) [7].…”

Section: Introductionmentioning

confidence: 99%

Effects of High-k Dielectric Materials on Electrical Characteristics of DG n-FinFETs

Boukortt¹,

Hadri²,

Patanè³

2016

IJCA

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This paper investigates the electrical characteristics of the nanoscale n-channel double gate fin field-effect transistor (FinFET) structures and their sensitivity to gate dielectric materials with different channel materials using SiGe and 3C-SiC in the channel region. In this work, the numerical tool Atlas Silvaco was used to simulate the device in three dimensions and evaluate the electrical characteristics of the device at 300K. The influence of the gate dielectrics on threshold voltage roll-off, subthreshold slope, transconductance, drain induced barrier lowering, leakage current, on-current, and on/off current ratio has been investigated. The simulation results show that high drain current and transconductance were obtained with SiGe channel material. The results also show that a higher value of gate dielectric constant can increase the drain current and improve the leakage current. Drain induced barrier lowering is reduced with the increase in gate dielectric constant. It can be noticed with different and useful results which led researchers to further manufacturing process in order to get the complete device. General TermsIntegrated Circuit, VLSI, FinFET Device Modeling.

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Electrical characterization of Au/3C-SiC/n-Si/Al Schottky junction

Cited by 43 publications

References 29 publications

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Effects of High-k Dielectric Materials on Electrical Characteristics of DG n-FinFETs

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