Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

Grossi, Alessandro; Zambelli, Cristian; Olivo, P.; Crespo-Yepes, A.; Martín-Martínez, J.; Rodrı́guez, R.; Nafría, M.; Pérez, Eduardo; Wenger, Christian

doi:10.1016/j.sse.2016.10.025

Cited by 8 publications

(3 citation statements)

References 21 publications

(29 reference statements)

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“…The corresponding parabolic potential barriers of V1, V2 and V3 devices are schematically represented as shown in Figure 11. The values of α and ϕ obtained for V1 devices are comparable with the results from Grossi et al [53]. The potential barrier height (ϕ) increases with the addition of Al 2 O 3 layers.…”

Section: Resultssupporting

confidence: 88%

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

et al. 2022

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The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.

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Section: Resultssupporting

confidence: 88%

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

et al. 2022

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“…In summary, by reducing the programming pulse width the voltage amplitudes and, in consequence, the number of pulses required by the ISPVA are increased. In order to decide whether this voltage increase is compensated by the reduction of the pulse width, in this extension of [16] the average energy required to carry out set and reset operations on a single RRAM device has been estimated as [23]:…”

Section: Resultsmentioning

confidence: 99%

Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays

et al. 2020

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A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 μ s and 50 ns and assessed on Al-doped HfO 2 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programming pulse width implemented. Nevertheless, the distributions of voltages as well as the amount of energy required to carry out the switching operations were definitely affected by the value of the pulse width. In addition, the data retention was evaluated after the endurance analysis by annealing the RRAM devices at 150 °C along 100 h. Just an almost negligible increase on the rate of degradation of about 1 μ A at the end of the 100 h of annealing was reported between those samples programmed by employing a pulse width of 10 μ s and those employing 50 ns. Finally, an endurance performance of 200k cycles without any degradation was achieved on 128 RRAM devices by using programming pulses of 100 ns width.

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“…sites for V O defects in the amorphous phase, the V O defects are not clustered in specific locations that facilitate filament formation. The filament formation is effectively suppressed in an amorphous layer as compared to the crystalline phase in RRAM devices 41 . V O defects will drift homogeneously throughout the entire area of the layer rather than forming defects-clustered filaments, following the direction of the electric field, enabling bulk switching instead of filamentary switching.…”

Section: Characterization Of Bulk Rram Switching Behaviormentioning

confidence: 99%

Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

Park,

Kumar,

Zhou

et al. 2024

Nat Commun

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CMOS-RRAM integration holds great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise, leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. We developed a filament-free, bulk switching RRAM technology to address these challenges. We systematically engineered a trilayer metal-oxide stack and investigated the switching characteristics of RRAM with varying thicknesses and oxygen vacancy distributions to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching at megaohm regime with high current nonlinearity, up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform and showcased edge computing by implementing a spiking neural network for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints.

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Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

Cited by 8 publications

References 21 publications

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays

Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

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