Electrical characteristics of vapor deposited amorphous MoS₂ two‐terminal structures and back gate thin film transistors with Al, Au, Cu and Ni‐Au contacts

Abstract

Amorphous molybdenum sulphide (a‐MoS2) thin films were deposited at near room temperature on oxidized silicon substrates and were electrically characterized with the use of two‐terminal structures and of back‐gated thin film transistors utilizing the substrate silicon as gate. Current‐voltage characteristics were extracted for various metals used as pads, showing significant current variations attributable to different metal‐sulphide interface properties and contact resistances, while the effect of a forming gas anneal was determined. With the use of heavily doped silicon substrates and aluminum backside deposition, thin film transistor (TFT) structures with the a‐MoS2 film as active layer were fabricated and characterized. Transfer characteristics showing a gate field effect, despite a leakage often present, were extracted for these devices, indicating that high mobility devices can be fabricated. SEM and EDXA measurements were also performed in an attempt to clarify issues related to material properties and fabrication procedures, so as to achieve a reliable and optimized a‐MoS2 TFT fabrication process. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films

“…That is to say, the contact between Ti/Au and the β-Ga 2 O 3 film still needs to be optimized. The same inference has been made on the back-gate a-MoS 2 thin film transistors (Kouvatsos et al, 2015).…”

Engineering of the perovskite/electron-transporting layer interface with transition metal chalcogenides for improving the performance of inverted perovskite solar cells

“…Transition metal chalcogenides (TMCs) represent a highly promising class of materials with a wide range of applications. These materials exhibit exceptional optical, electrical, catalytic, and mechanical properties, making them suitable for numerous elds, including batteries, 1,2 supercapacitors, 3 , (photo)catalysis, [4][5][6][7][8] , (photo)transistors [9][10][11] and other optoelectronic devices. [12][13][14][15][16][17] One feature of TMCs is their band gap tunability, which makes them ideal for adjustable light absorption, e.g., serving as the photoactive layer in photovoltaic applications.…”