Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films

Abstract

Monoclinic Ga2O3 (β-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by VGS. The current generated under dark conditions could also be regulated by VGS and tended to constant when the regulation of VGS was reaching saturation. Meanwhile, VGS was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5 A/W, suggesting a valuable application in solar-blind UV photodetectors.

Influence of oxygen vacancy and metal–semiconductor contact on the device performance of amorphous gallium oxide photodetectors

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Enhancement of UV detection properties of ZnO thin films via Ni doping

“…Accordingly, ultraviolet detectors have gained great importance for monitoring the environment and also in the military fields [19]. Many wide band gap nanomaterials including TiO 2 [20], NiO [21], SnO 2 [22], MoS [23], ZnTe [24], ZnSe [25,26], ZnO [27], SiC [28] and Nb 2 O 5 [29] has been used as a detectors for UV radiation. Among these materials Zinc oxide has proven, through many studies over a long period, its high efficiency in detecting ultraviolet radiation.…”

ALD oxygen vacancy-rich amorphous Ga2O3 on three-dimensional urchin-like ZnO arrays for high-performance self-powered solar-blind photodetectors

“…, α, β, γ, δ, ε, amorphous, and polycrystalline, 16 and the most stable phase, β-Ga 2 O 3 , has received considerable research interest. 17–21 However, the performance of β-Ga 2 O 3 -based photodetectors significantly depends on the quality of β-Ga 2 O 3 . Moreover, the preparation of crystalline β-Ga 2 O 3 requires a high-temperature.…”