Low-temperature ALD process development of 200 mm wafer-scale MoS2 for gas sensing application

Rahel-Manuela, Neubieser,; Wree, Jan‐Lucas; Jagosz, Julia; Becher, Malte; Ostendorf, Andreas; Devi, Anjana; Bock, Claudia; Michel, Marvin; Grabmaier, Anton

doi:10.1016/j.mne.2022.100126

Cited by 9 publications

(10 citation statements)

References 30 publications

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“…Figure a shows the pristine film, with no sign of triangular crystal growth, indicating the amorphous growth of the low‐temperature ALD process. [ 7 ] After thermal annealing (Figure 5b), the small polycrystalline, triangular MoS 2 crystals have formed, indicating the successful process. [ 9 ] Because of the high film thickness, the crystals appear to stack on top of each other, forming a continuous film from the small triangular patterns.…”

Section: Resultsmentioning

confidence: 99%

“…The number of growth cycles was 500, resulting in a film thickness of 40 nm. A detailed explanation of the ALD process is published by Neubieser et al [ 7 ] The deposition was carried out on 200 mm silicon wafers with 200 nm silicon dioxide, grown by plasma enhanced CVD (PE‐CVD).…”

Section: Methodsmentioning

confidence: 99%

“…Atomic layer deposition (ALD) processes work with deposition temperatures ranging from 60 to 250 °C, producing large area films of MoS 2 . These films feature amorphous [ 7 ] or polycrystalline [ 8 ] properties. For applications in high efficiency electronics, like thin‐film transistors, a monocrystalline film is desirable, which typically leads to a posttreatment of films, which do not fulfill the requirements.…”

Section: Introductionmentioning

confidence: 99%

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Ultrashort‐Pulsed‐Laser Annealing of Amorphous Atomic‐Layer‐Deposited MoS₂ Films

Becher,

Jagosz,

Neubieser

et al. 2023

Adv Eng Mater

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To implement 2D molybendum disulfide (MoS2) in the flexible electronic industry large, uniform, crystalline films on flexible substrates are needed. Thermal atomic layer deposition (ALD) generates large‐area uniform MoS2 films at low temperatures directly on temperature sensitive substrates. But if the grown films are amorphous a high temperature post treatment of the whole sample, which may cause thermal degradation of the substrate or other layers, needs to be avoided. In this paper we report the crystallization of amorphous MoS2 layers deposited by thermal ALD processed with picosecond laser laser pulses (λ = 532 nm), in a “cold” annealing process. The laser fluence range varies from Fmin = 8.73 mJ cm−2 to Fmax = 18.25 mJ cm−2 with scanning speeds from vscan,min = 240 mm s−1 to vscan,max = 2640 mm s−1. The crystallization and the influence of the processing parameters on the film morphology are analyzed in detail by Raman spectroscopy and scanning electron microscopy. Furthermore, a transition of amorphous MoS2 by laser annealing to self‐organized patterns is demonstrated and a possible process mechanism for the ultrashort pulse laser annealing is discussed. Finally, the usp laser annealed films are compared to thermally and continuous wave (cw) laser annealed samples.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ultrashort‐Pulsed‐Laser Annealing of Amorphous Atomic‐Layer‐Deposited MoS₂ Films

Becher,

Jagosz,

Neubieser

et al. 2023

Adv Eng Mater

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“…) exhibit excellent physical and/or chemical properties, such as high electrical conductivity, good thermal stability, high corrosion resistance and hardness values, and numerous potential applications. 1 These films have been applied to various fields, such as interconnects and word/bit lines, 2 catalysts, 3 barrier materials, 4 supercapacitors, 5 solar cells, 6 sensors, 7 and batteries. 8 Thin films containing Mo and W can be formed using various methods; however, chemical vapor deposition (CVD) and atomic layer deposition (ALD) have several advantages over physical vapor deposition technologies, such as sputtering and pulsed laser deposition.…”

Section: ■ Introductionmentioning

confidence: 99%

Synthesis and Volatility Characterization of Mo(II) and W(II) Compounds for Thin Films

Park,

Son,

Seo

et al. 2023

Inorg. Chem.

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Mo(II) and W(II) compounds, Mo(η 3 -allyl)(CO) 2 (Tri-MEDA)Br (1), Mo(η 3 -allyl)(CO) 2 (TMEDA)Br (2), W(η 3allyl)(CO) 2 (Tri-MEDA)Br (3), and W(η 3 -allyl)(CO) 2 (TMEDA)Br (4) (Tri-MEDA = N,N,N′-trimethylethylenediamine), were synthesized and characterized. The molecular structures of 1 and 3 were nearly identical with a pseudo-octahedral geometry except for the different Mo and W metal centers. The thermogravimetric analysis of 1 and 3 showed approximately 53 and 64% residues at 550 °C, respectively, which were significantly higher than the values for the expected materials. However, 1 and 3 sublimed at 100 °C under 0.40 Torr and 120 °C under 0.50 Torr, respectively, confirming that they were volatile. For 1 and 3, the temperatures at a vapor pressure of 1 Torr and enthalpies of vaporization (ΔH vap ) were 168.78 °C and 143.8 kJ mol −1 , and 167.48 °C and 148.5 kJ mol −1 , respectively. The tungsten compound (3) exhibited good durability for 5 weeks under a thermal stability test at a sublimation temperature of 120 °C.

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“…Thus, to close the gap between laboratory research and industrial implementation, large-scale deposition techniques need to be investigated, understood and developed. The common approaches for obtaining large-area TMDC films are atomic layer deposition (ALD) [6][7][8], chemical vapor deposition (CVD) [9][10][11][12][13], physical vapor deposition (PVD) [14,15] and thermal vapor sulfurization on a metal or metal oxide [16][17][18]. ALD processes are very attractive for flexible electronics because of the low deposition temperatures, but the resulting films often show poor crystallinity [8,19,20].…”

Section: Introductionmentioning

confidence: 99%

Nucleation and growth studies of large-area deposited WS₂ on flexible substrates

Berning

Becher

Wree

et al. 2022

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) such as tungsten disulfide (WS2) are studied for advanced electronic and optical devices because of their unique and versatile electrical, optical and mechanical properties. For the use of TMDC films in next-generation flexible electronics, large-area bottom-up synthesis on flexible substrates needs to be mastered, understood and controlled. In this study, we performed a detailed study on the nucleation and growth of WS2 layers deposited by metalorganic chemical vapor deposition (MOCVD) on crystalline van-der-Waals material muscovite mica as a model substrate and on the alkali-metal free flexible glass AF 32® eco. The deposition of the WS2 layers was performed using an all nitrogen-coordinated bis-imido-bis-amido tungsten based precursor in combination with elemental sulfur as the co-reactant. On both substrates, crystalline growth of WS2 at a moderate growth temperature of 600 ○C was verified by Raman spectroscopy and X-ray diffraction (XRD). However, the growth mode and nucleation density differ significantly. On mica, an initially planar growth of WS2 triangular islands is observed, whereas untreated glass reveals an out-off plane growth. Detailed XRD and Raman analysis show tensile strain in the WS2 films on both substrates, indicating a strong interaction from CVD grown TMDC films with the underlying carrier material. In order to avoid such substrate-semiconductor interaction, a substrate pre-treatment is required. A plasma pre-treatment prior to the deposition leads to a planar growth even on amorphous glass substrates.

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Low-temperature ALD process development of 200 mm wafer-scale MoS2 for gas sensing application

Cited by 9 publications

References 30 publications

Ultrashort‐Pulsed‐Laser Annealing of Amorphous Atomic‐Layer‐Deposited MoS₂ Films

Ultrashort‐Pulsed‐Laser Annealing of Amorphous Atomic‐Layer‐Deposited MoS₂ Films

Synthesis and Volatility Characterization of Mo(II) and W(II) Compounds for Thin Films

Nucleation and growth studies of large-area deposited WS₂ on flexible substrates

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Low-temperature ALD process development of 200 mm wafer-scale MoS2 for gas sensing application

Cited by 9 publications

References 30 publications

Ultrashort‐Pulsed‐Laser Annealing of Amorphous Atomic‐Layer‐Deposited MoS2 Films

Ultrashort‐Pulsed‐Laser Annealing of Amorphous Atomic‐Layer‐Deposited MoS2 Films

Synthesis and Volatility Characterization of Mo(II) and W(II) Compounds for Thin Films

Nucleation and growth studies of large-area deposited WS2 on flexible substrates

Contact Info

Product

Resources

About

Ultrashort‐Pulsed‐Laser Annealing of Amorphous Atomic‐Layer‐Deposited MoS₂ Films

Ultrashort‐Pulsed‐Laser Annealing of Amorphous Atomic‐Layer‐Deposited MoS₂ Films

Nucleation and growth studies of large-area deposited WS₂ on flexible substrates