Electrical characteristics of DNA-based metal-insulator-semiconductor structures

Abstract

High quality sandwich device was fabricated from wheat DNA molecular film by solution processing located between Au and n-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current–voltage (I–V) and capacitance–voltage (C–V) at room temperature. DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor of 1.22, and that DNA film increased the effective barrier height by influencing the space charge region of Si. We proposed that DNA could be an insulatorlike material with a wide optical band energy gap of 4.19 eV from its optical absorbance characteristics. Additionally, the energy distribution of interface state density, determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height, decreases exponentially with bias from 7.48×1015 m−2 eV−1 in (Ec−0.40) eV to 8.56×1014 m−2 eV−1 in (Ec−0.72) eV.

Charge Transport in 2D DNA Tunnel Junction Diodes

“…The DX DNA lattices exhibited a clear optical band gap of 4.72 eV and second band onset of 5.30 eV shown in Figure c. Our measurement of the optical band gaps revealed slight discrepancies (≈5%) compared to the previous reports, due to the differences in the geometry, number of nucleotides, and interfacial characteristics.…”

Phase transformation of nanostructured titanium dioxide thin films grown by sol–gel method

“…5 and Table 1, it is evident that an increase in annealing temperature leads to a decrease in optical band gaps. The decrease in the optical band gap is attributed to the lowering of the interatomic spacing, which may be associated with a decrease in the amplitude of atomic oscillations around their equilibrium positions [44]. The properties of the investigated TiO 2 thin films could be treated as a single oscillator at wavelength λ 0 at high frequency.…”

Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

“…In addition, η of 3.62 was extracted from the curve fitting of I-V characteristic of the n-type TiO 2 /p-type ZnO heterojunction diode, suggesting that there is a deviation from the ideality behavior [41]. The deviation may be attributed to either the recombination of electrons and holes in the depletion region, current mechanism, presence of a large number of surface states, and/or increase of diffusion current [41][42][43]. However, for p-SnS/ sulfide-treated SiNWs/n-Si devices, the value of η falls within the reasonable range of 1-2.…”