Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode

Investigation of structural and optoelectronic properties of annealed nickel phthalocyanine thin films

“…For certain advantages including ease of fabrication, thermal and chemical stability and insolubility in water, compatibility with flexible substrates and low-cost production processing, thin Pc films are commonly used in building electronic and optoelectronic devices such as organic solar cells [9,10], organic light emitting diodes (OLEDs) [11][12][13], field-effect transistors [14], optical recording [15], photodynamic therapy, non-linear optics [16], catalysis [17] and gas sensors [18]. It is known that the improvement of structural properties and photoconversion performance of PC-based devices rely mainly on understanding and controlling charge injection and charge transport processes [19][20][21].…”

Study of Synthesis and Temperature Dependence of DC Conductivity in the Low Temperature Range for Poly(N-Methylaniline)

“…Use of these materials is potentially feasible in technological applications such as display devices, rechargeable batteries, electromagnetic shielding, sensors, and Schottky diodes. [1][2][3][4][5][6][7] At present, polyanilines (PANI) doped with various protonic acids are the most promising intrinsic conducting polymers, due to their relatively high environmental and thermal stability and of course their simple and economical synthesis routes. 8,9 The great potential of PANI is, however, shrouded by some of its disadvantages, such as insolubility, infusibility, and hence nonprocessability.…”

Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p‐Si Schottky Diodes

“…These are thought as the main reasons for the small ideality factor with respect to the other sample. In both cases the ideality factors are deviated from the unity which can be related to current mechanism of the structure, barrier height inhomogeneity, recombination-generation, series resistance and image force levering which is voltage dependent, and/or an interface oxide layer [22]. The values of the barrier heights of the structures were found to be ~0.79 eV for both of the structures from the y -axis intercepts of the semilog-forward-bias I - V plots and (6).…”

“…In order to find the series resistance values, we have used the Norde's functions [22]. The function is defined as $\begin{array}{c}F\left(V\right)=\frac{V}{{\rm Y}}-\frac{kT}{q}\ln \left(\frac{I\left(V\right)}{A{A}^{\ast }T}\right),\end{array}$ where Υ is the first integer greater than n and I ( V ) is the current obtained from the I - V curve.…”