Electrical Characterisation of Silicon-Rich-Oxide Based Memory Cells Using Pulsed Current-Voltage Techniques

Abstract

MOS FET's and capacitors with a gate oxide containing a Silicon-Rich-Oxide (SRO) layer were fabricated. Memory action occurs through trapping of charge in the SRO-layer. Pulsed Current-Voltage techniques recording Id-Vg and C-V-curves have been used to determine the cell characteristics. Programming and erasing can be achieved by applying ±8V pulses with 100ms pulse width. Faster programming and HUDVLQJ FDQ EH REWDLQHG E\ DSSO\LQJ HJ V pulses on the gate electrode. The cells have an endurance of 10 5 cycles and an estimated retention of 10 years.

Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique

“…To this aim, the development of investigation techniques, which are able to reduce the impact of charge trapping on measurement results, is a major concern, achieving an increasing interest [2,3]. In this work, we characterize charge trapping in SiO 2 /Al 2 O 3 stacks, making use of a pulsed capacitance-voltage (C-V) technique [4], which allows us to measure a complete C-V characteristic in a relatively short time. This reduces the impact of charge trapping on the measurement results, as opposed to the conventional high-frequency C-V measurement.…”

Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

“…Arguably, the conventional and off-site radiation response measurements may underestimate the degradation of MOS devices. It was found that the defects in HfO 2 would induce charging and neutralization behaviors during the applied pulse waveform [11]. Therefore, the pulse CV technique is convincing for observing the charge trapping behaviors in relatively short time, which is close to the actual conditions.…”

Time-Resolved Programming Current Measurement and Modeling for nand -type Nanodot Flash Cell

“…It is found that the current component around 7 mA/cm 2 at both the rising and falling edges results from the tunnel oxide capacitive charging/discharging (ICtox). The ICtox current during the voltage pulse (Vpulse) ramping down peaks at around 3 ms, corresponding to the transition point between the electron and hole current injection [11], [12], as the polarity at the storage node switches from positive to negative. Also, as one would expect, the current peaks at 20 mA/cm 2 due to the tunneling current through the tunnel oxide (IRtox), which will not appear until the electrical field across the tunnel oxide is high enough that the Fowler-Nordheim tunneling begins.…”