Electrical behavior of fast neutron irradiated semi-insulating GaAs during thermal recovery

Goltzené, A.; Schwab, C.; David, Jean‐Pierre; Roizes, A.

doi:10.1063/1.97518

Cited by 18 publications

(6 citation statements)

References 7 publications

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“…For the ion bombardment doses needed to approach the saturation hopping DC conductivity, the defect concentration can be roughly estimated by extrapolating DLTS data [26] to be of the order of 1019 cm-3. An estimate is also obtained from EPR of fast-neutronirradiated materials [6], in which case the onset of hopping conduction is observed when the As' defects are in a concentration of 1018 cm-3 [7]. For these concentrations, nearest neighbour hopping probabilities are expected to exceed those for second neighbour hopping by several orders of magnitude.…”

Section: Introductionmentioning

confidence: 99%

“…E3 is known to be very sensitive to the electric field [28] whereas EL6 is practically insensitive to the field [27]. This difference in the electric-field behaviour of E3 and EL6 can be accounted for, according to the theory of reference [6], by the abnormally large lattice relaxation energy of EL6 [27,33] (S'hw === 600 meV).…”

Section: Introductionmentioning

confidence: 99%

“…The Fermi-level has been reported to be pinned near mid-gap in GaAs materials after a large dose of fast-electron [4] or heavy-particle (fast-neutron or ion) [6,7] bombardment. A similar Fermi-level pinning is also observed near real GaAs surfaces [8] irrespective of the surface treatment or dielectric deposition used.…”

Section: Introductionmentioning

confidence: 99%

“…Similar EPR spectra are observed after plastic deformation or fast neutron irradiation [3] of n-or p-GaAs. The [4] or fast neutron [6] irradiation. These observations suggest that the ASGA defect is associated with the mid-gap single donor level MG that was postulated above for the interpretation of DLTS data.…”

Section: Introductionmentioning

confidence: 99%

“…The famous EL2 single donor, which is native in bulk and vapour phase epitaxial materials, is probably a complex including the AsGa defect [1][2][3][4][5][6] [21].…”

Section: Introductionmentioning

confidence: 99%

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Defect pairs and clusters related to the EL2 centre in GaAs

Makram–Ebeid¹,

Boher²

1988

Rev. Phys. Appl. (Paris)

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Résumé. 2014 Dans cet article, nous proposons des interprétations cohérentes des données expérimentales sur l'AsGa irradié obtenues par des études de spectroscopie de In heavy dose irradiated GaAs, the DC conductivity is attributed to hopping between MG defects. Our calculations provide extremely good fits to the experimental results of Deng et al. for the DC electrical conductivity in GaAs induced by argon ion bombardment for temperatures ranging from around 20 K to 500 K. The phonon energy 012703C9 (20 ± 2 meV) and Franck-Condon shift S012703C9 (145 ±10 meV) of MG needed to achieve this fit are in very good agreement with the 012703C9 and S012703C9 values earlier determined for the native EL2 defect. The bulk AC hopping conductivity has also been calculated and found to agree well with experimental results of Mare0161 et al. for high purity semi-insulating GaAs. The corresponding low-frequency AC conductivity is attributed entirely to a homogeneous random distribution of native mid-gap donor defects EL2. We are also led to invoke the mid-gap level MG (identifiable with that of EL2) in order to account for DLTS results. In fast-electron irradiated n-GaAs, the two high temperature DLTS peaks E4 and E5 are both accounted for by two defect pairs each including an MG level component. In heavy-particle bombarded n-GaAs damage clusters including MG defects account for the experimentally recorded high temperature DLTS peak. For these defect pairs and clusters, our DLTS simulations correctly predict the observed peak positions and their dependence on the electric field.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The famous EL2 single donor, which is native in bulk and vapour phase epitaxial materials, is probably a complex including the AsGa defect [1][2][3][4][5][6] [21].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations