Electrical and thermoelectric properties of evaporated copper films

Sugawara, Hideaki; Nagano, T.; Uozumi, Kiyohiko; Kinbara, Akira

doi:10.1016/0040-6090(72)90434-8

Cited by 53 publications

(5 citation statements)

References 26 publications

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“…It is interesting to compare these results with the values of h obtained earlier from similar measurements on copper films. Sugawara et al (1972) from their measurements on copper films with thickness greater than 250 A, annealed at 300 "C, obtained p = 0 3 and h=590 A, whereas Leonard and Ho-Yuan Yu (1973) obtained h(1 -p)=310 A for their copper films (850-2400 A) annealed at 480 "C to 500 "C for 5 h. The annealing temperatures employed in both these studies were much higher compared to those of the present investigations. It has been found by taking electron micrographs (Mohan 1974) that if the copper films are taken to a temperature of about 250 "C, agglomeration takes place for films even as thick as 600 A.…”

Section: -( B )contrasting

confidence: 54%

Electrical resistivity, TCR and thermoelectric power of annealed thin copper films

Rao

Mohan

Reddy

1976

J. Phys. D: Appl. Phys.

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The electrical resistivity, temperature coefficient of resistance (TCR) and thermoelectric power are measured on systematically annealed copper films formed by the vacuum evaporation method. From the measured quantities the scattering coefficient and the bulk mean free path of the conduction electrons are calculated. The electron mean free path is found to be 410+or-100 AA. The energy dependence of mean free path U and the energy dependence of Fermi surface area V are calculated from the thermoelectric power measurements as a function of thickness. Both U and V are found to be negative and thickness-dependent.

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Section: -( B )contrasting

confidence: 54%

Electrical resistivity, TCR and thermoelectric power of annealed thin copper films

Rao

Mohan

Reddy

1976

J. Phys. D: Appl. Phys.

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“…[29][30][31][32] For copper at room temperature l 0 Ϸ39 nm. Although strictly valid only for tӷl 0 , Eq.…”

Section: ͑2͒mentioning

confidence: 99%

Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H-terminated Si(100)

Krastev

Voice

Tobin

1996

Journal of Applied Physics

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We have investigated the crystal structure, surface morphology, and electrical conductance of Cu films grown on H-terminated Si(100). The films were grown by thermal evaporation at 10−8 Torr, at deposition rates from 0.1 to 3.5 nm/s and at substrate temperatures from room temperature up to 200 °C. Typical film thicknesses were ∼100 nm. Epitaxial growth was verified by x-ray diffraction for films grown near room temperature at rates up to 2 nm/s. The root-mean-square surface roughness was measured to be 1–2 nm using atomic force microscopy (AFM). Higher growth rates or deposition temperatures above 100 °C produced poor quality, nonepitaxial films. Postdeposition annealing at temperatures up to 175 °C did not improve the surface roughness, and at higher annealing temperatures rapid silicide formation destroyed the Cu film. In situ electrical resistance measurements and AFM images suggest that for about the first 6 nm of growth the film consists of disconnected islands. X-ray-diffraction data show that the islands consist of crystalline Cu; there is no evidence for a silicide layer. At higher thicknesses the film consists of Cu with an impurity concentration of a few tenths atomic percent. The thickness dependence of the electrical conductance implies a high level of surface, interface, or grain-boundary scattering, characterized by a near-zero apparent specularity parameter p.

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“…For obtaining a more accurate value of S NT , we used reported diffusive Seebeck coefficient of pure platinum, which is −5.6 µV K −1 at T = 300 K which decreases linearly with decreasing temperature [28] because the strong suppression of the phonon-drag effect in evaporated films that are not wellannealed [29,30].…”

Section: Test Bench Fabrication and Calibrationmentioning

confidence: 99%

Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes

Kim

et al. 2020

Nanotechnology

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We report on the thermal and thermoelectric properties of individual nanocrystalline Bi 2 Te 3 nanotubes synthesized by the solution phase method using 3ω method and a microfabricated testbench. Measurements show that the nanotubes offer improved ZT compared to bulk Bi 2 Te 3 near room temperature due to an enhanced Seebeck coefficient and suppressed thermal conductivity. This improvement in ZT originates from the nanocrystalline nature and low dimensionality of the nanotubes. Domain boundary filtering of low-energy electrons provides an enhanced Seebeck coefficient. The scattering of phonons at the surface of the nanotube leads to suppressed thermal conductivity. These have been theoretically analyzed using the Boltzmann equation based on the relaxation time approximation and Landauer approach. This work clearly demonstrates the possibility of achieving enhancement in thermoelectric efficiency by combining nanocrystalline and low-dimensional systems.

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Electrical and thermoelectric properties of evaporated copper films

Cited by 53 publications

References 26 publications

Electrical resistivity, TCR and thermoelectric power of annealed thin copper films

Electrical resistivity, TCR and thermoelectric power of annealed thin copper films

Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H-terminated Si(100)

Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes

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