Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures

Reddy, V. Rajagopal; Silpa, D. Sri; Yun, Hyung-Joong; Choi, Chel‐Jong

doi:10.1016/j.spmi.2014.03.016

Cited by 6 publications

(1 citation statement)

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“…To obtain a good interface of TiW/InP SBD, we choose 300 • C as the annealing temperature. [13] Under the applied voltage and frequency, the existence of N ss produces an anomaly in the forward-bias C-V curve of the SBD. In the past few years, many researchers have found anomalous peaks in the C-V characteristics of SBD, and explained that the phenomenon is related with the N ss .…”

Section: Introductionmentioning

confidence: 99%

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Wang¹

2018

Chinese Phys. B

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The capacitance-voltage (C-V ) characteristic of the TiW/p-InP Schottky barrier diodes (SBDs) is analyzed considering the effects of the interface state (N ss ), series resistance (R s ), and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α and β are used to reflect the N ss and R s on the C-V characteristics, respectively. The α decreases with the increase of frequency, while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β . From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.

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Section: Introductionmentioning

confidence: 99%