Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Abstract

The capacitance-voltage (C-V ) characteristic of the TiW/p-InP Schottky barrier diodes (SBDs) is analyzed considering the effects of the interface state (N ss ), series resistance (R s ), and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α and β are used to reflect the N ss and R s on the C-V characteristics, respectively. The α decreases with the increase of frequency, while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β . From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.

The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer

“…A rapid and trustworthy examination method to define the interface states (D it ) is the Hill-Coleman approach [36]. This approach has also approved by other researchers [37,40]. This application use the singlefrequency approximation and allows prediction of interface states by using the following formula with the help of G/w-V measurements:…”

“…The high interfacial states pin the fermi level of substrate and may adversely affect its operation. However, D it values (×10 12 eV −1 cm −2 ) that calculated at high frequencies are not high enough to pin the Fermi level and cannot disrepute device operation [37,40]. Investigation of dielectric properties of a structure is important in the development of electronic devices.…”