Electrical and Radiation Characteristics of Semilarge Photoconductive Terahertz Emitters

Stone, Michael R.; Naftaly, Mira; Miles, R.E.; Fletcher, J. R.; Steenson, D.P.

doi:10.1109/tmtt.2004.835980

Cited by 51 publications

(42 citation statements)

References 19 publications

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“…6. The integrated THz power was found to follow a quadratic relationship with both the bias voltage and the pump power, in keeping with the standard theory of photoconductive emission [27,28]. The highest power Fe:InGaAs emitter (doped at 3 × 10 16 cm…”

Section: Dependence Of Thz Emission On Bias Voltage and Pump Powersupporting

confidence: 81%

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

Hatem

Freeman

Cunningham

et al. 2015

J Infrared Milli Terahz Waves

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We demonstrate efficient generation of terahertz (THz) frequency radiation by pulsed excitation, at wavelengths between 800 and 1550 nm, of photoconductive (PC) switches fabricated using Fe-doped InGaAsP wafers, grown by metal organic chemical vapor deposition (MOCVD). Compared to our previous studies of Fe-doped InGaAs wafers, Fe:InGaAsP wafers exhibited five times greater dark resistivity to give a value of 10 kΩ cm, and Fe:InGaAsP PC switches produced five times higher THz power emission. The effect of Fe-doping concentration (between 1E16 and 1.5E17 cm ) on optical light absorption (between 800 and 1600 nm), on resistivity, and on THz emission is also discussed.

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Section: Dependence Of Thz Emission On Bias Voltage and Pump Powersupporting

confidence: 81%

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

Hatem

Freeman

Cunningham

et al. 2015

J Infrared Milli Terahz Waves

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show abstract

“…4 Apart from the material properties, 5,6 the output from PC antennas also depends critically on the design of the electrodes. 7 Further sophistication such as the incorporation of Bragg mirrors has been pursued. 8 Of electro-optic ͑EO͒ emitters, ZnTe is the most widely employed.…”

mentioning

confidence: 99%

Strong terahertz emission from (100) p-type InAs

Mendis

Smith

Bignell

et al. 2005

Journal of Applied Physics

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Terahertz emission has been observed from (100) Zn-acceptor-doped InAs under illumination by fs pulses of near-infrared radiation. Turning the crystal about the surface normal produces two maxima per rotation, whether the angle of incidence is 45° or 75°, in contrast to (111) p-InAs, where three maxima per rotation have been reported. The emitted terahertz power has a quadratic variation with the pump power and decreases with increasing temperature in the range 20–300K. This behavior is consistent with a photocurrent surge being the dominant terahertz generating mechanism at low excitation fluences. The p-type InAs generates about two orders of magnitude more power than the standard unbiased terahertz emitter, 1mm thick ZnTe.

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“…The silver painted electrode acts as a Schottky contact. 23 Schottky contacts enable carriers created by photo-excitation to be replenished when an applied bias field draws them out of the materiel. As a consequence, Schottky contacts limit the rise of the current.…”

Section: Comparison Of Back-side and Front-side Illuminationmentioning

confidence: 99%

“…This transient current radiates an electromagnetic field at the surface of the semiconductor. From Maxwell's equations, the THz electric field in the far field is proportional to the time derivative of the transient current, 23 which can be expressed as 24…”

mentioning

confidence: 99%

Improvement in thermal barriers to intense terahertz generation from photoconductive antennas

Ropagnol

Bouvier

Reid

et al. 2014

Journal of Applied Physics

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We study the generation of free-space terahertz (THz) pulses at low THz frequencies using 6H-SiC and 4H-SiC photoconductive antennas. We investigate the dependence of the THz electric field radiated from the biased SiC emitters on the applied bias field and on the incident optical fluence. In this work, bias fields as high as 32 kV/cm, and optical fluences up to 2.5 mJ/cm 2 (for the 400 nm laser), and 7.5 mJ/cm 2 (for the 800 nm laser) were used. THz generation with back-and front-side illumination of the antennas is also examined. It is found that the SiC antenna, when illuminated from the backside, generates higher THz electric fields. The performance of 6H-SiC and ZnSe photoconductive antennas are compared. We show that, taking advantage of the superior thermal properties of SiC compare with ZnSe, the THz output power generated with the 6H-SiC photoconductive antenna under optimum conditions is 2.3 times larger that with a ZnSe photoconductive antenna. V C 2014 AIP Publishing LLC. [http://dx.

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Electrical and Radiation Characteristics of Semilarge Photoconductive Terahertz Emitters

Cited by 51 publications

References 19 publications

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

Strong terahertz emission from (100) p-type InAs

Improvement in thermal barriers to intense terahertz generation from photoconductive antennas

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