2014
DOI: 10.1063/1.4891451
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Improvement in thermal barriers to intense terahertz generation from photoconductive antennas

Abstract: We study the generation of free-space terahertz (THz) pulses at low THz frequencies using 6H-SiC and 4H-SiC photoconductive antennas. We investigate the dependence of the THz electric field radiated from the biased SiC emitters on the applied bias field and on the incident optical fluence. In this work, bias fields as high as 32 kV/cm, and optical fluences up to 2.5 mJ/cm 2 (for the 400 nm laser), and 7.5 mJ/cm 2 (for the 800 nm laser) were used. THz generation with back-and front-side illumination of the ante… Show more

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Cited by 21 publications
(14 citation statements)
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References 44 publications
(61 reference statements)
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“…However, considering the error bar, we can conclude that all the saturation fluences are in the same range. The saturation fluences of the ZnSe and 6H-SiC LAPCA pumped with 248 nm laser is around 5 times larger than when they are pumped with 400 nm femtosecond laser [46,51]. Using equation (2), we calculate the transient carrier mobility, and find a transient mobility ranging from 52 cm 2 V −1 s −1 , for ZnSe, to 63 cm 2 V −1 s −1 for 6H-SiC.…”
Section: Thz Satmentioning
confidence: 99%
See 1 more Smart Citation
“…However, considering the error bar, we can conclude that all the saturation fluences are in the same range. The saturation fluences of the ZnSe and 6H-SiC LAPCA pumped with 248 nm laser is around 5 times larger than when they are pumped with 400 nm femtosecond laser [46,51]. Using equation (2), we calculate the transient carrier mobility, and find a transient mobility ranging from 52 cm 2 V −1 s −1 , for ZnSe, to 63 cm 2 V −1 s −1 for 6H-SiC.…”
Section: Thz Satmentioning
confidence: 99%
“…Wide-bandgap semiconductor crystals have large dielectric strength, which is advantageous, especially in comparison with smaller bandgap semiconductors (such as GaAs), since high bias fields need to be applied to LAPCAs for the generation of high-field THz pulses. Previously, diamond, ZnO, GaN, ZnSe, 4H-SiC and 6H-SiC crystals were tested as substrates for photoconductive antennas [43][44][45][46]. Despite showing promising results, most of these substrates have not been tested on a very large aperture for the generation of THz pulses with μJ energy level.…”
Section: Introductionmentioning
confidence: 99%
“…These two crystals can overcome the thermal effects well. Compared with ZnSe crystals, 6H-SiC has a 2.3 times higher THz field under optimal conditions [28].…”
Section: Photoconductive Antennamentioning
confidence: 99%
“…The main features of the radiation generated by large-aperture PCAs are the low-frequency peak in the emission spectrum and the quasi-half-cycle pulse of the emitted radiation [6,7]. Currently, the study of promising substrate materials suitable for different pump lasers is of great interest for high-power large-aperture PCA devices [8][9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%