Electrical and optical properties of lanthanum-modified lead zirconate titanate thin films by radio-frequency magnetron sputtering

Abstract

( Pb , La ) ( Zr , Ti ) O 3 (PLZT) thin films were grown on Pt∕Ti∕SiO2∕Si and fused quartz substrates by radio-frequency magnetron sputtering at 650°C. X-ray diffraction analysis shows that the PLZT films are polycrystalline with (100)-preferential orientation. The Al/PLZT/Pt capacitors have been fabricated and show good ferroelectric properties with the remanent polarization of 24.3μC∕cm2 and coercive field of 142kV∕cm. The leakage current density is only about 0.86×10−7A∕cm2 at 200kV∕cm. The energy gap Eg of the films is estimated to be about 3.54eV by optical transmittance measurements. Their fundamental optical constants are obtained by a Filmetrics F20 reflectance spectrometer (F20). These results show that the PLZT ferroelectric thin films are promising materials for optoelectronic devices.

Linear and nonlinear optical properties of (Pb,La)(Zr,Ti)O3ferroelectric thin films grown by radio-frequency magnetron sputtering

“…The total gas pressure was adjusted from 0.35 to 0.42 Pa in all the cases. The physical properties of the as-grown PLZT thin films are found in the previous work [20].…”

“…The ferroelectric measurements were performed for the PLZT thin films on Pt/Ti/SiO 2 /Si substrates grown at 650 • C [20]. Figure 7 gives the polarization-electric field (P -E) hysteresis loop of the PLZT thin films.…”

Modeling of multilayer electrode performance in transverse electro-optic modulators

“…Third are the material properties of EO wafer, such as (Pb,La)(Zr,Ti)O 3 (PLZT) and (1-x) Pb(Mg 2/3 Nb 1/3 )O 3 -x PbTiO 3 (PMN-PT), which all possess excellent quadratic EO effect and high transparency. 4,5 Fourth is the structure of the EO modulators. One common structure is the transverse EO modulator where electrodes are simply a Electronic mail: asjma@ntu.edu.sg attached on the substrate.…”

Magnetoelectric Coupling in Ni–Mn–In/PLZT Artificial Multiferroic Heterostructure and Its Application in Mid-IR Photothermal Modulation by External Magnetic Field

“…The midinfrared photothermal response of the Si-integrated Ni−Mn− In/PLZT heterostructure is quite fascinating because the energy of the mid-infrared photons (0.14−0.17 eV) is much lower than the PLZT band gap (3.54 eV). 58 Therefore, the top surface (PLZT) of the sample absorbs the mid-IR and gets heated up, which in turn increases its temperature and thereby reduces the resistance of the system. The sensitivity of the (electrical output for given infrared input) of the heterostructure device at different wavelengths lying in mid-infrared spectra is examined by illuminating the top surface of the heterostructure with mid-infrared radiation.…”

“…QCL was swept from 1200 to 1400 cm –1 at intervals of 50 cm –1 . The mid-infrared photothermal response of the Si-integrated Ni–Mn–In/PLZT heterostructure is quite fascinating because the energy of the mid-infrared photons (0.14–0.17 eV) is much lower than the PLZT band gap (3.54 eV) . Therefore, the top surface (PLZT) of the sample absorbs the mid-IR and gets heated up, which in turn increases its temperature and thereby reduces the resistance of the system.…”