Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Niebuhr, R.; Bachem, K. H.; Kaufmann, U.; Maier, M.; Merz, C. J.; Šantić, Branko; Schlotter, P.; Jurgensen,

doi:10.1007/s11664-997-0007-x

Cited by 39 publications

(36 citation statements)

References 17 publications

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“…Since the activation energy of Mg dopants in GaN is large (~170 meV [24]), the nature of the transparency of p-type GaN is different than this one which takes place in n-type GaN where the activation energy of O donors is comparable with the thermal energy at room temperature (the activation energy of oxygen in GaN is ~29-32 meV [25][26][27]). Even if non-intentional deep donors are present in n-type GaN, the free carrier absorption determines the transparency of n-type GaN in the infrared spectral region.…”

Section: Resultsmentioning

confidence: 99%

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

et al. 2017

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GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n-and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to~1 µm at n~10 20 cm −3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1-10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 10 18 cm −3 are highly transparent with the absorption coefficient below 3 cm −1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

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Section: Resultsmentioning

confidence: 99%

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

et al. 2017

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“…1, lead to narrow XRD linewidths. On the other hand, the use of high purity gases is essential for the growth of GaN, because oxygen, which is assumed to be the most frequent impurity in ammonia, is incorporated very efficiently in GaN [4][5][6]. Acting as a shallow donor [7,8] it causes an undesired electron background concentration.…”

Section: Methodsmentioning

confidence: 99%

An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire

Kuhn¹,

Scholz²

2001

phys. stat. sol. (a)

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We present a new oxygen-doped AlN nucleation layer for the growth of high quality GaN on sapphire by metalorganic vapor phase epitaxy. We investigated in detail the influence of oxygen in the gas phase in a range from 0.5 to 10 ppm. Around 4 ppm we obtained very stable and reproducible process conditions. A further optimization of the nucleation thickness resulted in GaN layers showing smooth and featureless surfaces with excellent spectroscopic properties. The best values were 45 arcsec in XRD rocking curve of the (002) peak and 1.7 meV in low temperature photoluminescence (PL) of the donor bound exciton. No yellow luminescence even at room temperature could be detected. Because of the low FWHM in PL a lot of features near the bandgap of GaN could be resolved. We observed the donor and acceptor bound exciton as well as the free A, B and C exciton.

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“…With the exception of the substrate interface region [3], very low background carrier concentrations can now be achieved, by implementing appropriate purifying techniques. Experiments with intentional oxygen doping have also been performed, to study the donor properties, and to explore oxygen as a possible alternative to Si for n-type doping [4][5][6][7].…”

mentioning

confidence: 99%

Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition

Heikman¹,

Keller

DenBaars

et al. 2003

phys. stat. sol. (c)

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One of the most challenging tasks encountered in developing highly efficient electro‐optic (EO) devices is to find a material system that possesses all desirable properties such as large EO coefficients, good thermal and mechanical stability, and low optical loss. In order to meet this stringent requirement, we have developed a series of crosslinkable EO dendrimers using the standardized AJL8‐type chromophore as the center core and the furyl‐ and anthryl‐containing dendrons as the periphery. Upon adding a trismaleimide (TMI) dienophile, these dendrimers could be in‐situ crosslinked via the Diels–Alder cycloaddition and efficiently poled under a high electric field. Through this dynamic process, the spatially voided and π‐electron‐rich surrounding of the chromophore core changes into a dense and more aliphatic network, with the dipolar chromophore embedded and aligned inside. The resultant materials exhibit large EO coefficients (63–99 pm V–1 at 1.31 μm), excellent temporal stability (the original r33 values remain unchanged at 100 °C for more than 500 h), and blue‐shifted near‐IR absorption. With these combined desirable properties, a poled EOD2/TMI film could be processed through multiple lithographic and etching steps to fabricate a racetrack‐shaped micro‐ring resonator. By coupling this ring resonator with a side‐polished optical fiber, a novel broadband electric‐field sensor with high sensitivity of 100 mV m–1 at 550 MHz was successfully demonstrated.

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Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Cited by 39 publications

References 17 publications

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire

Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition

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