Electrical and optical properties of silicon doped InP grown by gas source MBE

Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP

“…These discrepancies have been observed by many researchers. 1,4,[8][9][10]12,15,[17][18][19]21 In the most detailed studies of GaAs 14,16,19 and InGaAsP, 12 the peak shape has been precisely fitted ͑see, for example, Fig. 6 in this article, as well as figures in the cited references͒, 12,14,16,19 using rather simple models with a few adjustable parameters, which assume a constant transition matrix element and do not include reabsorption.…”

“…[1][2][3][4][5][6][7][8][9][10] A dominant feature observed in the experimental spectra is the Burstein-Moss effect ͑band filling͒ which manifests itself in the spectra as a broadening of the band-to-band ͑B-B͒ transition peak and an accompanying shift of this peak toward higher energies. These effects become very noticeable at doping concentrations above 10 18 cm Ϫ3 , and have been observed by many researchers in both n-InP 1-10 as well as in many n-type III-V alloys [11][12][13][14][15][16][17][18][19] by both photoluminescence and cathodoluminescence.…”

“…12,16,19 Since E F ϪE c is a measure of the FWHM of the fitted PL spectrum, these line shape fitting results are consistent with the unexpectedly narrow FWHM values reported generally in the literature. 1,4,[8][9][10]12,15,[17][18][19]21 The question thus arises: Why do such excellent line shape agreements correspond to unreasonably low values of the fitted Fermi level?…”

“…A number of physical mechanisms besides band filling affect the B-B peak luminescence, including band-gap narrowing ͑BGN͒, [8][9][10][15][16][17][18][19]21 compensation, 2,22,23 optical excitation intensity ͑i.e., high level injection effects͒, 8 reabsorption of the luminescence, 8,20,22,24,25 distortions due to the wave vector dependence of the transition matrix element, 8,20 doping dependence of the effective mass due to conduction-band nonparabolicity, 1,4,[8][9][10]15 and, for ternary and quaternary compounds, alloying-induced disorder effects. 12 Considering these influences, only reabsorption, wave vector dependence of the transition matrix element, and conduction-band nonparabolicity have the potential to reduce both the peak position energy and the FWHM in binary compounds.…”

Physical modeling of degenerately doped compound semiconductors for high-performance HBT design

“…The differences between acceptor and hole concentrations is less dramatic due to the higher N V when compared to N C , but no less important to numerical simulation. The use of the previously described analytical expressions and table to determine the Mott transition is comparable with previously published experimental data for donors [23] and acceptors [24], respectively, in InP. Additional experimental data for In 0.53 Ga 0.47 As were not available for comparison.…”