Physical modeling of degenerately doped compound semiconductors for high-performance HBT design

Li, James C.; Sokolich, M.; Hussain, T.; Asbeck, P.M.

doi:10.1016/j.sse.2006.04.047

Cited by 15 publications

(8 citation statements)

References 20 publications

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“…The bulk velocity field characteristics are then obtained using (11) and (12). The comparison of the 2v-DD model with BTE data is shown in Fig.…”

Section: A Steady-state Bulk Velocity-field Characteristicsmentioning

confidence: 99%

“…[7][8][9]) in industry and academia. It has been shown though that the SEG approach does not provide satisfactory results for III-V devices for several reasons [10][11][12][13]. The NDM formulation of the mobility leads to severe convergence problems, prohibiting simulations in the operating region of interest for circuit applications [6,11,14].…”

Section: Introductionmentioning

confidence: 99%

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1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices

Müller

Dollfus

Schröter

2021

IEEE Trans. Electron Devices

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A two-valley formulation of 1D drift-diffusion transport is presented that takes the coupling between the valleys into account via a new approximation for the non-local electric field. The proposed formulation is suitable for the simulation of III-V heterojunction bipolar transistors as opposed to formulations that employ the single electron gas approximation with a modified velocity-field model, which also causes convergence problems. Based on Boltzmann transport equation simulations, model parameters of the proposed two-valley formulation are given for GaAs, InP, InAs andGaSb at room temperature. Applications of the new formulation are also demonstrated.

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“…The bulk velocity field characteristics are then obtained using (11) and (12). The comparison of the 2v-DD model with BTE data is shown in Fig.…”

Section: A Steady-state Bulk Velocity-field Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices

Müller

Dollfus

Schröter

2021

IEEE Trans. Electron Devices

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“…The value of DE BM was calculated in pursuance of parabolic−band theory using Eq. (1) -E F parameter, taking into account the effect of a nonparabolic conduction band by introducing the doping dependent electron effective mass m e * according to the third order polynomial empirical model (Poly3x) proposed by James C. Li et al [16] …”

Section: Lp−movpe Growth and Properties Of High Si−doped Ingaas Contamentioning

confidence: 99%

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Ściana

Badura

Dawidowski

et al. 2016

Opto-Electronics Review

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The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to The electron concentration increases linearly with the ratio of gas−phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon−contact lay− ers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas−phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high−resolution X−ray diffraction revealed a dis− tinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of -240¸-780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.

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“…In summary, at low and moderate doping concentrations (10 16 cm À3 ), for most of the III-V semiconductors, the change in the bandgap is smaller than the thermal energy. However, heavily doped semiconductors (greater than or equal to 10 18 cm À3 ) may suffer as much as 200 meV bandgap reduction [137,138]. The bandgap narrowing in In 0.53 Ga 0.47 As due to heavy doping concentrations for both donors and acceptors is shown in Fig.…”

Section: Doping Issues In Iii-v Semiconductorsmentioning

confidence: 99%