Electrical and dielectric characteristics of Al/Dy2O3/p-Si heterostructure

Electrical and dielectric characterization of Au/ZnO/n–Si device depending frequency and voltage

“…It could be understood that the device behaviors are obtained based on the investigations of N ss and R s because they strongly influence electrical properties. [26] Correlation of N ss with frequency is obtained by Hill-Coleman technique for ZnO/n-Si device. According to this method, the voltage dependence of N ss can be expressed as following relation: [25] N ss = 2 qA…”

Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

“…The R s value of the diodes decreases with the increasing in frequency. This behavior of R s is resulted from interface charge, fixed oxide charge, oxide-trapped charge and mobile oxide charge [54][55][56][57][58]. The R s -V curves of the photodiodes gives a peak and peak intensity is decreased with the frequency.…”

A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

“…It is seen that the series resistance decreases with the increasing frequency. This frequency dependence of R s is the result of frequency-dependent charges such as interface charge, fixed oxide charge, oxide-trapped charge and mobile oxide charge [52][53][54][55][56]. Moreover, the R s -V plots give a peak at about -1 V for 0 and 1at.% Li and the peak intensity is decreased with the increasing frequency.…”